K4B4G1646E-BMMA

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K4B4G1646E-BMMA

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4Gbit 1.28V~1.575V 933MHz DDR3L SDRAM FBGA-96 Memory (ICs) RoHS

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Especificações

Atributo Valor
Packaging FBGA-96
Clock Frequency 933MHz
Supply Current 18mA
Memory Format DDR3L SDRAM
Memory Size 4Gbit
Operating Temperature -40℃~+95℃
Voltage - Supply 1.28V~1.575V

Visão Geral

Description

K4B4G1646E-BMMA is a model number for a type of DRAM (Dynamic Random-Access Memory) chip, specifically a DDR4 (Double Data Rate 4) SDRAM (Synchronous DRAM) module. Manufactured by Samsung, this chip is designed for high-speed data processing and is used extensively in computing environments such as personal computers, servers, and other electronic devices that require fast and efficient memory solutions.
Key features of the K4B4G1646E-BMMA include its high data transfer rates, low power consumption, and enhanced memory reliability. The DDR4 technology offers improvements over its predecessors in terms of speed and energy efficiency, making it suitable for high-performance applications. Additionally, these chips are often part of larger memory modules which can vary in capacity, and they play a critical role in a system's overall performance by enabling quick access to data for the CPU.
In summary, this memory chip model is part of the advanced DDR4 memory technology that supports the growing demands for faster and more efficient computing solutions.

Equivalent

The K4B4G1646E-BMMA is a 4Gb DDR3 SDRAM chip made by Samsung. Equivalent products from other manufacturers include:
1. Hynix: H5TQ4G63AFR series
2. Micron: MT41K256M16 series
3. Nanya: NT5CB256M16 series
4. Elpida: EDJ4104BASE series
These chips offer similar specifications and are interchangeable in many applications requiring DDR3 memory. Always verify compatibility based on the specific requirements of your device or application.

Features

The K4B4G1646E-BMMA is a DRAM module, specifically a DDR3 (Double Data Rate 3) SDRAM chip. Here are its key features:
1. Capacity: 4Gb (Gigabits) which equals 512MB (Megabytes) per chip.
2. Type: DDR3 SDRAM, known for its high speed and efficiency compared to previous generations.
3. Data Rate: Supports a range of data rates up to 1600 Mbps, providing fast data access and transfer.
4. Voltage: Operates at a low voltage of 1.5V, which helps in reducing power consumption and heat generation.
5. Package: Typically comes in an FBGA (Fine Ball Grid Array) package that facilitates high-density mounting.
6. Burst Length: Features burst lengths of 8, with support for sequential and interleaved burst types, enhancing performance.
7. Refresh: Supports auto-refresh and self-refresh modes, which help maintain data integrity.
8. Error Correction: Often used in systems that do not require ECC (Error-Correcting Code).
This chip is often utilized in a variety of computing applications, including PCs, laptops, and servers, for its balance of speed, efficiency, and compact design.

Pinout

The K4B4G1646E-BMMA is a DRAM chip manufactured by Samsung. It is part of the DDR3 SDRAM family and is commonly used in a variety of electronic devices for memory storage. The chip typically comes in a 96-ball Fine Ball Grid Array (FBGA) package.
The primary function of the K4B4G1646E-BMMA is to provide high-speed, volatile memory storage. It is designed to operate at a memory clock speed of 1600 MHz and supports a variety of features including an 8n prefetch architecture, auto-refresh, and self-refresh modes. The chip has a capacity of 4 Gb (gigabits) and operates with a 1.5V power supply, which can be reduced to 1.35V in low-power modes.
Overall, the K4B4G1646E-BMMA is designed for high-performance applications such as computing and networking devices, where fast data processing and efficient memory management are crucial.

Manufacturer

The K4B4G1646E-BMMA is a DRAM memory chip manufactured by Samsung Electronics. Samsung Electronics is a multinational conglomerate based in South Korea and is one of the largest technology companies in the world. The company is known for its diverse product range, including consumer electronics like smartphones, tablets, TVs, and home appliances, as well as components such as semiconductors, memory chips, and displays. Samsung is a leader in the semiconductor industry and plays a significant role in supplying memory products, including DRAM and NAND flash, to various technology sectors.

Application

The K4B4G1646E-BMMA is a 4Gb DDR3 SDRAM memory chip commonly used in various electronic applications. Its primary applications include:
1. Computing Devices: Used in desktops, laptops, and servers to provide efficient and high-speed memory solutions.
2. Consumer Electronics: Integrated into devices like smart TVs, gaming consoles, and set-top boxes for enhanced performance.
3. Networking Equipment: Employed in routers and switches for improved data processing capabilities.
4. Industrial and Automotive Systems: Utilized in embedded systems requiring reliable and robust memory.
5. Mobile Devices: Found in smartphones and tablets, offering balanced power consumption and performance.
These applications leverage its speed, efficiency, and reliability in data-intensive operations.

Package

The K4B4G1646E-BMMA is a 4Gb DDR3 SDRAM from Samsung, typically housed in a standard FBGA (Fine-pitch Ball Grid Array) package, which allows for a compact design suitable for high-density applications.

Frequently Asked Questions


Q: What is the memory density and organization of the K4B4G1646E-BMMA?
A: It is a 4Gbit DDR3L SDRAM, organized as 256M x 16 bits, ideal for high-density embedded applications.


Q: What is the operating voltage range for this DDR3L component?
A: It supports a voltage supply from 1.28V to 1.575V, compliant with DDR3L low-power standards.


Q: Can this memory operate in industrial temperature environments?
A: Yes, its operating temperature range is -40°C to +95°C, suitable for harsh industrial or automotive conditions.


Q: What is the maximum clock frequency supported by this device?
A: It supports a clock frequency of 933MHz, corresponding to DDR3L-1866 data rate performance.


Q: What is the typical supply current during active operation?
A: The typical active supply current is 18mA, ensuring efficient power consumption for memory-intensive tasks.


Q: Does this memory fit standard DDR3L sockets or PCB layouts?
A: Yes, it is packaged in FBGA-96, compatible with standard DDR3L PCB footprints and JEDEC specifications.


Q: Is this component suitable for low-voltage system designs?
A: Absolutely, with a 1.28V-1.575V supply, it is optimized for low-power DDR3L systems, reducing overall thermal output.


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