K4F6E304HB-MGCJ

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K4F6E304HB-MGCJ

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16Gbit x32 LPDDR4 SMD Memory (ICs) RoHS

  • FabricanteSamsung

  • Peça do Fabricante #K4F6E304HB-MGCJ

  • Em Estoque8818

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Especificações

Atributo Valor
Packaging SMD
Interface LPDDR4
Memory Format x32
Memory Size 16Gbit
Operating Temperature -25℃~+85℃
Voltage - Supply 1.8V;1.1V

Visão Geral

Description

"K4F6E304HB-MGCJ" likely refers to a specific model or part number, possibly in electronics, such as semiconductor memory or another component used in electronic devices. While there isn't specific widely available information on this exact part number, it can be broken down as follows:
1. K4F6E304HB: This part of the designation often identifies the specific series or type of the component. It could refer to a DRAM chip, NAND flash memory, or another type of memory part manufactured by a company like Samsung or another semiconductor manufacturer.
2. MGCJ: This suffix usually specifies details such as the packaging type, speed grade, or other attributes that distinguish variations within the same series.
For precise details, it would be necessary to refer to the manufacturer's datasheet or product documentation, which provides technical specifications, pin configurations, and operational parameters relevant to engineers and system designers who might use this component in their projects.

Equivalent

The K4F6E304HB-MGCJ is a Samsung LPDDR3 DRAM chip. Equivalent products would include similar LPDDR3 chips from other manufacturers, such as:
1. Micron's MT52L256M32
2. SK Hynix's H9CCNNNBPTML
3. Kingston's LPDDR3 offerings
4. Nanya's NT5CC256M32DP-DI
These equivalents should match in key specifications like size and speed to ensure compatibility. Always verify with the manufacturer's datasheet for precise compatibility.

Features

The part number K4F6E304HB-MGCJ refers to a specific Samsung LPDDR4 DRAM chip. Here are some of its features:
1. Memory Type: LPDDR4 (Low Power Double Data Rate 4), which is designed for power efficiency.
2. Density: Typically available in higher densities for increased storage capacity.
3. Speed: Faster data rates compared to previous LPDDR versions, supporting high-speed applications.
4. Voltage: Operates at lower voltages, reducing power consumption and extending battery life in mobile devices.
5. Package: Often comes in compact packaging suitable for mobile and embedded applications.
6. Applications: Ideal for smartphones, tablets, and other portable devices where power efficiency and performance are crucial.
These features make the K4F6E304HB-MGCJ well-suited for modern mobile computing needs, balancing performance with energy efficiency.

Pinout

The K4F6E304HB-MGCJ is a LPDDR4 DRAM chip manufactured by Samsung. It typically comes in a package with a 200-ball Fine Ball Grid Array (FBGA) configuration. This chip is designed for use in memory applications such as mobile devices and other electronics requiring efficient power and performance.
The primary function of the K4F6E304HB-MGCJ is to provide volatile memory storage, enabling the temporary storage and retrieval of data. This allows devices to perform tasks such as running applications and processing data. Key features of LPDDR4 memory like this include higher data rates, improved power efficiency, and lower operating voltages compared to previous generations of DRAM, making them suitable for modern mobile and portable applications.
For detailed pin configuration and specific functions, the datasheet from the manufacturer should be consulted, as it provides a comprehensive breakdown of the pin assignments and their respective roles.

Manufacturer

The K4F6E304HB-MGCJ is a memory chip manufactured by Samsung Electronics. Samsung Electronics is a global leader in technology and a major manufacturer of electronic components, including semiconductors, memory chips, and consumer electronics. It is a subsidiary of the South Korean conglomerate Samsung Group, which is one of the largest and most well-known corporate entities globally. Samsung Electronics is renowned for its innovation and production capabilities in the electronics industry, contributing significantly to advancements in technology.

Application

The K4F6E304HB-MGCJ is a memory module, specifically a low-power DDR4 DRAM, commonly used in applications requiring efficient power consumption and high performance. Its typical application areas include mobile devices like smartphones and tablets, wearable technology, and Internet of Things (IoT) devices. It is also utilized in automotive electronics for infotainment systems and advanced driver-assistance systems (ADAS), as well as in consumer electronics such as smart TVs and set-top boxes. The module is designed to offer fast data processing and high bandwidth while minimizing energy usage, making it ideal for portable and battery-operated devices.

Package

The K4F6E304HB-MGCJ is a DRAM module from Samsung, typically packaged in a standard JEDEC-compliant BGA (Ball Grid Array) form.

Frequently Asked Questions


Q: What memory types and configurations is this part designed for?
A: It is an LPDDR4 memory with x32 memory format and 16Gbit density, suitable for mobile and low-power applications.


Q: What are the required supply voltages for operation?
A: It requires a dual voltage supply: 1.8V for I/O and 1.1V for core operation, per LPDDR4 specifications.


Q: What is the operating temperature range of this component?
A: The specified operating temperature range is -25℃ to +85℃, making it suitable for industrial-grade environments.


Q: Is this component available in a surface-mount package?
A: Yes, it is packaged as SMD (Surface Mount Device), supporting automated PCB assembly.


Q: Can this memory be used in high-speed data applications?
A: Yes, as an LPDDR4 interface component with x32 bus width, it supports high-speed data transfer for demanding tasks.


Q: What is the total memory capacity in gigabytes?
A: The 16Gbit memory size equals 2GB (16Gbits ÷ 8 bits per byte) of low-power DRAM storage.


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