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MBT3904DW1T1G
+Lista de MateriaisTRANS 2NPN 40V 0.2A SC88/SC70-6
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Fabricanteonsemi
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Peça do Fabricante #MBT3904DW1T1G
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Pacote SC-88
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Especificações
| Atributo | Valor |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| Transistor Type | 2 NPN (Dual) |
| Current - Collector(Ic)(Max) | 200mA |
| Voltage - Collector Emitter Breakdown(Max) | 40V |
| Vce Saturation(Max) @ Ib Ic | 300mV @ 5mA, 50mA |
| DC Current Gain(h FE)(Min) @ Ic Vce | 100 @ 10mA, 1V |
| Power - Max | 150mW |
| Frequency - Transition | 300MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Visão Geral
Description
The MBT3904DW1T1G is a dual NPN bipolar junction transistor (BJT) in a single package, designed for amplification and switching applications. It comes from ON Semiconductor and is notable for its compact size and efficient performance in electronic circuits. This transistor is housed in a SOT-363 package, making it ideal for applications where space is limited, such as portable electronic devices.
Key specifications include a collector-emitter voltage (VCEO) of 40V, a collector current (IC) of 200 mA, and a power dissipation of 300 mW. Its small footprint and dual-transistor configuration allow for greater circuit density and reduced component count, enhancing both performance and cost-effectiveness.
The MBT3904DW1T1G is often used in general-purpose switching and amplification tasks, where its reliability and efficiency are necessary. It is suitable for use in applications like signal processing, RF amplification, and as a switch in various electronic designs. Its low noise and high-speed switching capabilities make it a versatile component in modern electronic engineering.
Key specifications include a collector-emitter voltage (VCEO) of 40V, a collector current (IC) of 200 mA, and a power dissipation of 300 mW. Its small footprint and dual-transistor configuration allow for greater circuit density and reduced component count, enhancing both performance and cost-effectiveness.
The MBT3904DW1T1G is often used in general-purpose switching and amplification tasks, where its reliability and efficiency are necessary. It is suitable for use in applications like signal processing, RF amplification, and as a switch in various electronic designs. Its low noise and high-speed switching capabilities make it a versatile component in modern electronic engineering.
Equivalent
The MBT3904DW1T1G is a dual NPN bipolar junction transistor (BJT). Equivalent products include BC847BS, BC847BPN, and MMBT3904. These alternatives share similar electrical characteristics and package types, but always verify the specifications and pin configurations before substituting to ensure compatibility with your application.
Features
The MBT3904DW1T1G is a dual NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Key features include:
1. Dual NPN Transistors: Combines two NPN transistors in a single package, reducing board space and simplifying design layouts.
2. Compact Package: Available in a small SOT-363 surface-mount package, making it ideal for space-constrained applications.
3. Voltage and Current Ratings: Features a collector-emitter voltage (VCEO) of 40V and a collector current (IC) rating of 200mA, suiting various low-power applications.
4. High Switching Speed: Capable of fast switching, suitable for high-speed circuits and signal processing tasks.
5. Complementary Pair: Can be used in conjunction with complementary PNP transistors for push-pull circuits or other complementary designs.
6. Thermal Performance: The small package size provides efficient thermal performance in appropriate conditions.
7. Wide Range of Applications: Suitable for use in amplifiers, drivers, signal processing, and low-power switching circuits.
These features make the MBT3904DW1T1G a versatile and efficient choice for designers needing reliable NPN transistors in compact form factors.
1. Dual NPN Transistors: Combines two NPN transistors in a single package, reducing board space and simplifying design layouts.
2. Compact Package: Available in a small SOT-363 surface-mount package, making it ideal for space-constrained applications.
3. Voltage and Current Ratings: Features a collector-emitter voltage (VCEO) of 40V and a collector current (IC) rating of 200mA, suiting various low-power applications.
4. High Switching Speed: Capable of fast switching, suitable for high-speed circuits and signal processing tasks.
5. Complementary Pair: Can be used in conjunction with complementary PNP transistors for push-pull circuits or other complementary designs.
6. Thermal Performance: The small package size provides efficient thermal performance in appropriate conditions.
7. Wide Range of Applications: Suitable for use in amplifiers, drivers, signal processing, and low-power switching circuits.
These features make the MBT3904DW1T1G a versatile and efficient choice for designers needing reliable NPN transistors in compact form factors.
Pinout
The MBT3904DW1T1G is a dual NPN bipolar junction transistor (BJT) housed in a small SOT-363 package. It has a total of 6 pins. Each transistor within the package has three pins: collector, base, and emitter. The pin configuration for the SOT-363 package is typically as follows:
1. Pin 1: Emitter of transistor Q1
2. Pin 2: Base of transistor Q1
3. Pin 3: Collector of transistor Q2
4. Pin 4: Emitter of transistor Q2
5. Pin 5: Base of transistor Q2
6. Pin 6: Collector of transistor Q1
The MBT3904DW1T1G is used in various applications, including switching and amplification, due to its moderate current and voltage ratings. It is suitable for general-purpose switching and small signal amplification tasks.
1. Pin 1: Emitter of transistor Q1
2. Pin 2: Base of transistor Q1
3. Pin 3: Collector of transistor Q2
4. Pin 4: Emitter of transistor Q2
5. Pin 5: Base of transistor Q2
6. Pin 6: Collector of transistor Q1
The MBT3904DW1T1G is used in various applications, including switching and amplification, due to its moderate current and voltage ratings. It is suitable for general-purpose switching and small signal amplification tasks.
Manufacturer
The MBT3904DW1T1G is manufactured by ON Semiconductor, which is now known as onsemi. Onsemi is a leading provider of semiconductor solutions, focusing on energy-efficient innovations, automotive, industrial, cloud power, and Internet of Things (IoT) applications. The company designs, manufactures, and markets a wide range of semiconductor components, including power and signal management, logic, discrete, and custom devices. Onsemi is recognized for its commitment to sustainable practices and delivering high-performance products to help its customers solve challenging technical issues, reduce global energy use, and create a better world.
Application
The MBT3904DW1T1G is a dual NPN bipolar junction transistor commonly used in various applications such as signal amplification, switching, and voltage regulation. Its compact packaging makes it suitable for space-constrained designs. Typical application areas include consumer electronics, automotive systems, telecommunications, and industrial controls. It's often used in low-power amplifiers, driver circuits, and digital or analog switching circuits. Due to its fast switching speed and reliability, it is an ideal choice for general-purpose applications in electronic devices, providing efficient performance in both discrete and integrated circuit designs.
Package
The MBT3904DW1T1G is a dual NPN bipolar junction transistor (BJT) and comes in a SOT-363 (SC-88) surface mount package. This package type is compact and suitable for high-density mounting on printed circuit boards.
