MBT3906DW1T1G

Imagens apenas para referência

MBT3906DW1T1G

+Lista de Materiais

TRANS 2PNP 40V 0.2A SC88/SC70-6

  • Fabricanteonsemi

  • Peça do Fabricante #MBT3906DW1T1G

  • Pacote SC-88

  • Em Estoque7350

365 Garantia de Qualidade em 1 dia

7*24 Garantia de serviço em 24 horas

90-Garantia de pós-venda em 1 dia

Garantia de Produto Genuíno

Especificações

Atributo Valor
Package / Case Tape & Reel (TR),Cut Tape (CT)
Part Status Active
Transistor Type 2 PNP (Dual)
Current - Collector(Ic)(Max) 200mA
Voltage - Collector Emitter Breakdown(Max) 40V
Vce Saturation(Max) @ Ib Ic 400mV @ 5mA, 50mA
DC Current Gain(h FE)(Min) @ Ic Vce 100 @ 10mA, 1V
Power - Max 150mW
Frequency - Transition 250MHz
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount

Visão Geral

Description

The MBT3906DW1T1G is a PNP bipolar junction transistor (BJT) in a SOT-363 (SC-88) package, designed by ON Semiconductor. It features dual PNP transistors in a single package, each with a -40V collector-emitter voltage (VCEO) and -200mA continuous collector current (IC).
Key specifications:
- Current gain (hFE): 100–300 (at IC = -10mA, VCE = -1V)
- Low saturation voltage for efficient switching.
- Compact footprint, ideal for space-constrained applications.
Common uses include signal amplification, switching circuits, and load driving in portable electronics, sensors, and communication devices. Its dual-transistor design saves board space compared to discrete components.
For detailed performance curves and layout guidelines, refer to the datasheet.

Equivalent

The MBT3906DW1T1G is a PNP transistor in a SOT-363 package. Equivalent alternatives include:
- BC856BS (Nexperia)
- MMBT3906DW1T1G (On Semiconductor)
- DTC144EKA (ROHM)
- 2N3906 (in different packages)
Check pin compatibility and electrical specs (Vceo, Ic, hFE) before substitution. For exact matches, consult datasheets or distributor cross-reference tools.

Pinout

The MBT3906DW1T1G is a PNP transistor in a SOT-363 (SC-88) package with 6 pins.
### Pin Functions:
1. Emitter (E1) – Pin 1
2. Base (B1) – Pin 2
3. Emitter (E2) – Pin 3
4. Emitter (E3) – Pin 4
5. Base (B2) – Pin 5
6. Emitter (E4) – Pin 6
It contains two independent PNP transistors (each with shared emitters), commonly used for switching and amplification in compact circuits.
Key Features:
- VCEO: -40V
- IC: -200mA per transistor
- Package: SOT-363 (small footprint)

Manufacturer

The MBT3906DW1T1G is manufactured by ON Semiconductor, now known as onsemi after rebranding in 2021.
onsemi is a global semiconductor company specializing in power management, analog, and sensor technologies. They serve industries like automotive, industrial, and consumer electronics, focusing on energy-efficient solutions.
The MBT3906DW1T1G is a PNP bipolar junction transistor (BJT) in a SOT-363 package, commonly used for amplification and switching applications.
Summary:
- Manufacturer: onsemi (formerly ON Semiconductor)
- Company Type: Semiconductor supplier for power, analog, and sensor solutions.
- Product Type: PNP transistor for general-purpose circuits.

Application

The MBT3906DW1T1G, a PNP bipolar junction transistor (BJT), is commonly used in:
1. Switching Circuits – For load control in power management.
2. Amplification – In audio and signal processing circuits.
3. Motor Drivers – For small DC motor control.
4. LED Drivers – Current regulation in lighting systems.
5. Consumer Electronics – TVs, smartphones, and portable devices.
6. Automotive Systems – Sensors and infotainment controls.
Its dual-transistor (DW1 package) design suits compact, high-efficiency applications.

Package

The MBT3906DW1T1G is a PNP transistor in a SOT-363 (SC-88) surface-mount package. It features a compact 6-pin configuration, suitable for high-density PCB designs. The package dimensions are approximately 2.1mm x 2.1mm x 0.95mm, making it ideal for space-constrained applications.

Produtos relacionados a MBT3906DW1T1G