MJE13009

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TRANS NPN 400V 12A TO220

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Especificações

Atributo Valor
Supplier onsemi
Package / Case Tube
Part Status Obsolete
Transistor Type NPN
Current - Collector(Ic)(Max) 12 A
Voltage - Collector Emitter Breakdown(Max) 400 V
Vce Saturation(Max) @ Ib Ic 3V @ 3A, 12A
DC Current Gain(h FE)(Min) @ Ic Vce 8 @ 5A, 5V
Power - Max 2 W
Frequency - Transition 4MHz
Operating Temperature -65°C ~ 150°C (TJ)
Mounting Type Through Hole

Visão Geral

Description

The MJE13009 is a high-voltage, high-speed NPN bipolar junction transistor (BJT) designed for use in power switching applications. It is commonly utilized in environments such as power amplifiers, power inverters, and switch-mode power supplies. The MJE13009 is capable of handling high current and voltage, with a collector-emitter voltage (V_CEO) rating of up to 400V and a collector current (I_C) of 12A.
This transistor features a robust design, with a high-speed switching capability, allowing for efficient operation in demanding applications. The MJE13009 is often packaged in a TO-220 case, which aids in heat dissipation, a crucial factor given the high power it can handle. Additionally, its fast switching times make it suitable for use in high-frequency applications.
Typical applications include lighting ballasts, motor control circuits, and uninterruptible power supplies (UPS). The MJE13009's reliability and performance make it a popular choice for engineers designing circuits that require efficient power handling and durability under high-stress conditions.

Equivalent

The MJE13009 is a high-voltage, high-speed NPN power transistor commonly used in switching power supplies and other applications. Equivalent products include:
1. 2SC2625
2. 2SC3052
3. TIP122 (with some differences in parameters)
4. BU508A
5. MJE13007 (with some differences in parameters)
Always verify specifications and pin configurations when substituting components to ensure compatibility with your circuit.

Features

The MJE13009 is an NPN bipolar junction transistor (BJT) commonly used in high-voltage, high-speed switching applications. Its key features include:
1. High Voltage Rating: It has a collector-emitter voltage (V_CE) rating of up to 400V, making it suitable for high-voltage applications.
2. High Current Capability: The transistor can handle a collector current (I_C) of up to 12A, which allows it to be used in high-power circuits.
3. Fast Switching Speed: It is designed for quick switching, making it ideal for use in switching power supplies and other applications requiring rapid on/off states.
4. Power Dissipation: The device has a power dissipation capacity of around 80W, which helps in efficiently managing heat during operation.
5. TO-220 Package: The MJE13009 is typically housed in a TO-220 package, which provides good thermal performance and ease of mounting onto heat sinks.
6. Applications: It is often used in power converters, inverters, and as a switch in electronic circuits.
These features make the MJE13009 a versatile component for various electronic applications.

Pinout

The MJE13009 is a high-voltage, high-speed NPN bipolar junction transistor (BJT) commonly used in power switching applications. It typically comes in a TO-220 package and has three pins:
1. Collector (C): This is the pin through which the main current flows from the collector to the emitter when the transistor is in the "on" state. It is connected to the load in a circuit.
2. Base (B): This pin is used to control the transistor's operation. A small current supplied to the base allows a much larger current to flow from the collector to the emitter.
3. Emitter (E): This is the pin through which current exits in a conventional current flow (from emitter to collector). It is typically connected to the ground or the negative side of the power supply.
The MJE13009 is often used in high-speed switching applications, such as in switch-mode power supplies (SMPS) and other high-frequency circuits, due to its capability to handle high voltages and currents efficiently.

Manufacturer

The MJE13009 is a high-voltage NPN bipolar junction transistor (BJT) commonly used in power supply and switching applications. It is manufactured by several companies, including ON Semiconductor, STMicroelectronics, and Fairchild Semiconductor (now part of ON Semiconductor). These companies are well-known in the semiconductor industry.
1. ON Semiconductor: A leading supplier focused on energy-efficient electronics, ON Semiconductor provides various semiconductor-based solutions including power and signal management, logic, discrete, and custom devices for a wide range of applications.
2. STMicroelectronics: A global semiconductor company that designs and manufactures a wide range of products for various applications such as industrial, automotive, and consumer electronics. They focus on offering innovative solutions to help customers overcome their challenges.
3. Fairchild Semiconductor (now part of ON Semiconductor): Was a major player in the semiconductor industry known for producing a variety of products including discrete components, power supply components, and more.
These companies are typically involved in the design, manufacture, and sale of semiconductors and semiconductor circuit components, serving industries such as consumer electronics, automotive, communications, and computing.

Application

The MJE13009 is an NPN bipolar junction transistor commonly used in high-voltage and high-speed switching applications. It is frequently employed in power supply circuits, including switch-mode power supplies (SMPS), where efficient and rapid switching is crucial. Additionally, it's used in the design of inverters, motor control circuits, and lighting ballasts. Its high current and voltage handling capabilities make it suitable for use in various industrial and consumer electronic devices that require reliable and robust performance under challenging electrical conditions. The MJE13009's thermal stability and durability also make it ideal for applications involving inductive loads.

Package

The MJE13009 is typically available in a TO-220 package. This package type provides a robust, heat-dissipating design suitable for high-power and high-voltage applications.

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