MMBT5087LT1G

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MMBT5087LT1G

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TRANS PNP 50V 0.05A SOT23-3

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Especificações

Atributo Valor
Supplier onsemi,Rochester Electronics, LLC
Package Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus Active
TransistorType PNP
Current-Collector(Ic)(Max) 50 mA
Voltage-CollectorEmitterBreakdown(Max) 50 V
VceSaturation(Max)@IbIc 300mV @ 1mA, 10mA
Current-CollectorCutoff(Max) 50nA (ICBO)
DCCurrentGain(hFE)(Min)@IcVce 250 @ 100µA, 5V
Power-Max 300 mW
Frequency-Transition 40MHz
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case TO-236-3, SC-59, SOT-23-3

Visão Geral

Description

The MMBT5087LT1G is a PNP bipolar junction transistor (BJT) commonly used in electronic circuits for amplification and switching applications. Manufactured by ON Semiconductor, it is housed in a SOT-23 package, making it suitable for surface-mount applications.
Key specifications include a collector-emitter voltage (V_CE) of -45V, a collector current (I_C) of -100mA, and a power dissipation of 225mW. It has a DC current gain (h_FE) typically ranging from 100 to 300, providing moderate amplification capabilities. The transistor is designed for general-purpose applications, including signal processing and low-power amplification circuits.
The MMBT5087LT1G is valued for its small size, reliability, and efficiency in various low-power electronic devices. Its compact SOT-23 package offers space-saving advantages, making it ideal for densely packed circuit boards. With its solid performance and cost-effectiveness, it is a popular choice among engineers and designers for a wide array of electronics projects.

Equivalent

The MMBT5087LT1G is a PNP bipolar junction transistor (BJT). Equivalent products include the 2N5087, BC557, BC558, and MMBT3906, which have similar electrical characteristics. When selecting an equivalent, ensure they match in terms of voltage, current ratings, and packaging (SOT-23) if necessary. Always verify specific requirements like gain and switching frequency, as these can vary slightly between different manufacturer specifications.

Features

The MMBT5087LT1G is a PNP bipolar junction transistor (BJT) known for its small signal amplification capabilities. Key features include:
1. Voltage and Current Ratings: It has a collector-emitter voltage (V_ceo) of 50V and a collector current (I_c) of 100mA.
2. Power Dissipation: The transistor supports a power dissipation of 225mW.
3. Gain: It offers a high current gain (h_FE) ranging from 100 to 300, facilitating effective amplification.
4. Package Type: It is available in a SOT-23 surface-mount package, making it suitable for compact PCBs and space-constrained applications.
5. Temperature Range: It operates within a temperature range from -55°C to +150°C, ensuring reliability in various environmental conditions.
6. Applications: Ideal for switching and amplifying applications in consumer electronics, communication devices, and other small-signal circuits.
7. Compliance: It is RoHS compliant, ensuring it meets environmental safety standards.
These features make the MMBT5087LT1G a versatile choice for designers seeking a reliable transistor for low-power applications.

Pinout

The MMBT5087LT1G is a PNP bipolar junction transistor (BJT) used for general-purpose amplification and switching applications. It typically comes in a SOT-23 package, which is a small surface-mount package. This transistor has a pin count of three.
The pin configuration is as follows:
1. Pin 1 (Base): This is the control pin used to trigger the transistor. By applying current to the base, the transistor is turned on, allowing current to flow between the collector and emitter.
2. Pin 2 (Emitter): The emitter is the terminal through which current flows out of the transistor. In a PNP configuration, the emitter is typically connected to the more positive voltage supply.
3. Pin 3 (Collector): The collector is the terminal through which current flows into the transistor when it is in the "on" state.
Overall, the MMBT5087LT1G is used in electronic circuits to amplify signals or switch electronic loads by controlling the current flow between the collector and emitter based on the input at the base.

Manufacturer

The MMBT5087LT1G is manufactured by ON Semiconductor, now known as onsemi. Onsemi is a leading semiconductor manufacturer that designs and produces a wide range of semiconductor components, including power and signal management, logic, discrete, and custom devices. These components are used in various applications across different sectors such as automotive, industrial, communications, computing, and consumer electronics.
As a company, onsemi focuses on innovative solutions related to energy efficiency, offering products that contribute to the efficient use of energy in electronic systems. The company is heavily involved in the development of technologies for electric vehicles, advanced safety systems, and smart power applications. Onsemi operates globally, with a significant presence in North America, Europe, and Asia, and is recognized for its commitment to sustainability and socially responsible practices in semiconductor manufacturing.

Application

The MMBT5087LT1G is a PNP bipolar junction transistor commonly used in various electronic applications. Its typical application areas include:
1. Signal Amplification: Utilized in small signal amplification circuits due to its low noise characteristics.
2. Switching: Employed in switching applications for low power devices.
3. Analog Circuits: Suitable for use in analog circuits including operational amplifiers and audio signal processing.
4. Voltage Regulation: Used in voltage regulation circuits and DC-DC converters.
5. Consumer Electronics: Found in general-purpose circuits within consumer electronics such as radios, TVs, and other household gadgets.
These features make it versatile for many general-purpose electronic applications.

Package

The MMBT5087LT1G is a PNP bipolar junction transistor (BJT) housed in a SOT-23 package. The SOT-23 package is a small, surface-mount package designed for applications requiring minimal space on a printed circuit board (PCB).

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