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IC DRAM 1GBIT PARALLEL 78FBGA
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FabricanteMicron Technology Inc.
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Peça do Fabricante #MT41J256M4JP-125:G
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Ficha Técnica MT41J256M4JP-125:G DataSheet
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Pacote TFBGA-78
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Especificações
| Atributo | Valor |
| Supplier | Micron Technology Inc. |
| Package / Case | Tray |
| Part Status | Discontinued at Digi-Key |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR3 |
| Memory Size | 1Gb (256M x 4) |
| Memory Interface | Parallel |
| Clock Frequency | 800 MHz |
| Voltage - Supply | 1.425V ~ 1.575V |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
Visão Geral
Description
- Density/organization: 1 Gbit total, arranged as 256M × 4 (256 million words of 4 bits).
- Family/part type: MT41J256M4 – part of Micron’s MT41J mobile DRAM lines; JP is package code; G indicates RoHS-compliant (lead-free).
- Speed/voltage: -125 is the speed bin (timing/throughput) and voltage/timing are defined in the datasheet (typical low-voltage operation for mobile DRAM; exact values vary with mode).
- Interface: Synchronous JEDEC DRAM interface designed for mobile/embedded systems.
- Applications: Used as memory in smartphones, tablets, embedded devices, or as memory buffers in SoCs.
- How to read the name: MT = Micron; 41J256M4 = product family, density (256M) and width (4); JP = package; -125 = speed grade; :G = RoHS.
For precise electrical specs, timings, voltage ranges, packaging, and thermal data, consult the official Micron MT41J256M4JP-125:G datasheet.
Equivalent
Features
- Density/organization: 1 Gbit total (256 Mbit × 4)
- Interface: Mobile SDRAM with x4 data path; 8 banks
- Speed grade: -125 (125 MT/s)
- Voltage: typical low-power class (1.8V era; some variants support lower voltages)
- synchronous operation with DQS/DQ signaling
- Burst: programmable burst lengths (BL4/BL8) and burst type
- Refresh: automatic/auto-refresh support; partial array self-refresh
- Timing features: DLL, ZQ calibration
- Power management: low-power operation, suitable for mobile/embedded apps
- Package/UL: RoHS-compliant; standard Micron BGA/package variants
Note: exact voltage range and timing can vary by specific package/revision; consult the datasheet for precise specs.
Pinout
Function: Micron MT41J256M4JP-125:G is a 256-Mbit x4 DDR3/DDR3L SDRAM memory device (four data I/O lines, standard address/control signals) used as system memory.
Manufacturer
- What kind of company: An American multinational semiconductor company that designs and manufactures memory and storage technologies (DRAM, NAND/NOR flash); one of the world’s largest memory makers, headquartered in Boise, Idaho.
Application
- Mobile/embedded devices (smartphones, tablets, handhelds)
- Ultra-thin laptops and portable computers
- Graphics/video buffering and frame buffers in multimedia gear
- Set-top boxes, digital TVs, cameras, and home entertainment gear
- Networking/telecom equipment and edge devices
- Automotive infotainment and telematics
- Industrial control and IoT applications needing compact RAM
Note: verify exact memory standard (DDR/DDR3/DDR4) and voltage for your design.
