MT49H16M36BM-18:B

MT49H16M36BM-18:B is a Micron DRAM device in the MT49H family. It is a 576‑Megabit memory organized as 16,384,000 words by 36 bits (32 data bits plus 4 ECC) per access, which makes it a 32‑bit data path with ECC, common in embedded/mobile systems. The “-18” suffix indicates the device’s voltage/timing grade (typically around 1.8 V I/O, with a defined speed grade), while “BM” denotes the package/ RoHS-compliant variant (e.g., a ball-grid array lead‑free package). This part is designed for low‑power, high‑density DRAM in compact systems and requires a memory controller capable of handling a 36‑bit wide bus with ECC.
Key takeaway: it’s a Micron 576 Mb, 36‑bit‑wide DRAM for embedded applications, with 32 data bits + 4 ECC, 1.8 V class operation, and a RoHS/BD package. For exact timings, operating conditions, and pinout, consult the MT49H16M36BM-18:B datasheet from Micron.

Pin count: 54 pins (FBGA-54).
Function: Micron MT49H16M36BM-18:B is a mobile, low‑power synchronous DRAM (SDRAM) device with 16M x 16 organization (256 Mbit total), 8 banks, operating at 1.8V. It uses the standard DRAM interface (CK, CK#, CKE, CS#, RAS#, CAS#, DQ, DQM, etc.).

- Manufacturer: Micron Technology, Inc.
- Company type: An American multinational semiconductor company that designs, manufactures, and sells memory and storage technologies (DRAM, NAND/NOR flash, SSDs) and related products.

MT49H16M36BM-18:B is a high-density, ECC DRAM device (16M x 36, 72-bit data path when paired). Suitable for building ECC memory modules. Application areas include:
- Servers and high-end workstations (ECC DIMMs)
- Networking and telecom equipment
- Storage controllers and RAID cards
- Embedded industrial, automotive, and medical equipment requiring reliable memory
Note: designed for low-power operation (1.8V-class) in ECC memory subsystems.

BM indicates a Ball Grid Array (BGA) package, specifically an FBGA-type package. For exact ball count/key dimensions, refer to the datasheet.