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DRAM LPDDR3 16Gbit 32 178/221 VFBGA 2 WT
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FabricanteMicron
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Peça do Fabricante #MT52L512M32D2PF-107 WT:B
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Em Estoque16079
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Especificações
| Atributo | Valor |
| Packaging | Tray |
| Standard Pack Qty | 1134 |
Visão Geral
Description
The MT52L512M32D2PF-107 WT:B is a LPDDR4 SDRAM chip from Micron Technology, designed for high-performance, low-power applications like mobile devices and embedded systems.
### Key Features:
- Capacity: 16Gb (512M x 32-bit).
- Speed: 1066 MHz (2133 Mbps/pin), with CAS Latency (CL) of 15.
- Voltage: 1.1V (VDD), 1.8V (VDDQ).
- Package: 200-ball FBGA (8x10mm).
- Operating Temp: -25°C to +85°C (industrial range).
### Applications:
- Smartphones, tablets, automotive systems, and IoT devices.
The "WT:B" suffix indicates specific speed binning and industrial-grade qualification.
For detailed specs, refer to Micron’s datasheet.
### Key Features:
- Capacity: 16Gb (512M x 32-bit).
- Speed: 1066 MHz (2133 Mbps/pin), with CAS Latency (CL) of 15.
- Voltage: 1.1V (VDD), 1.8V (VDDQ).
- Package: 200-ball FBGA (8x10mm).
- Operating Temp: -25°C to +85°C (industrial range).
### Applications:
- Smartphones, tablets, automotive systems, and IoT devices.
The "WT:B" suffix indicates specific speed binning and industrial-grade qualification.
For detailed specs, refer to Micron’s datasheet.
Features
The MT52L512M32D2PF-107 WT:B is a 4GB LPDDR3 SDRAM chip from Micron. Key features:
- Density: 4Gb (512M x 32-bit)
- Speed: 1866 Mbps (DDR3L-1866)
- Voltage: 1.2V (low-power operation)
- Package: 168-ball FBGA
- Organization: x32, dual-channel capable
- Refresh: Auto-refresh & self-refresh modes
- Operating Temp: Commercial/industrial ranges
- Low Power: Supports power-down modes for efficiency
Ideal for mobile, embedded, and power-sensitive applications.
- Density: 4Gb (512M x 32-bit)
- Speed: 1866 Mbps (DDR3L-1866)
- Voltage: 1.2V (low-power operation)
- Package: 168-ball FBGA
- Organization: x32, dual-channel capable
- Refresh: Auto-refresh & self-refresh modes
- Operating Temp: Commercial/industrial ranges
- Low Power: Supports power-down modes for efficiency
Ideal for mobile, embedded, and power-sensitive applications.
Pinout
The MT52L512M32D2PF-107 WT:B is a 4Gb (512M × 32) LPDDR3 SDRAM chip from Micron.
- Pin Count: 168-ball FBGA (Fine-pitch Ball Grid Array).
- Key Functions:
- 32-bit wide data bus (DQ0-DQ31).
- 10-bit address bus (A0-A9) with bank addressing (BA0-BA2).
- Differential clock inputs (CK_t/CK_c).
- Control signals (CS_n, RAS_n, CAS_n, WE_n).
- Low-power features (CA parity, programmable impedance).
- Operating voltage: 1.2V (VDD/VDDQ).
It’s designed for mobile/embedded applications, offering high-speed (1066 Mbps), low-power operation.
- Pin Count: 168-ball FBGA (Fine-pitch Ball Grid Array).
- Key Functions:
- 32-bit wide data bus (DQ0-DQ31).
- 10-bit address bus (A0-A9) with bank addressing (BA0-BA2).
- Differential clock inputs (CK_t/CK_c).
- Control signals (CS_n, RAS_n, CAS_n, WE_n).
- Low-power features (CA parity, programmable impedance).
- Operating voltage: 1.2V (VDD/VDDQ).
It’s designed for mobile/embedded applications, offering high-speed (1066 Mbps), low-power operation.
Manufacturer
The MT52L512M32D2PF-107 WT:B is a LPDDR4 SDRAM module manufactured by Micron Technology, a leading American semiconductor company specializing in memory and storage solutions. Micron is known for producing DRAM, NAND flash, and other advanced memory technologies used in computing, automotive, and consumer electronics.
Founded in 1978 and headquartered in Boise, Idaho, Micron is one of the largest memory chip manufacturers globally, competing with companies like Samsung and SK Hynix. The MT52L512M32D2PF-107 WT:B is typically used in mobile devices, laptops, and embedded systems.
Founded in 1978 and headquartered in Boise, Idaho, Micron is one of the largest memory chip manufacturers globally, competing with companies like Samsung and SK Hynix. The MT52L512M32D2PF-107 WT:B is typically used in mobile devices, laptops, and embedded systems.
Package
The MT52L512M32D2PF-107 WT:B is a LPDDR4 SDRAM package in a 200-ball FBGA (Fine-Pitch Ball Grid Array) form factor. It features a x32 interface, 512Mb density per die, and operates at 1066 MHz (CL=15). The "WT:B" suffix indicates a wafer-level package (WLP) variant. Commonly used in mobile/embedded applications for high-speed, low-power memory needs.
