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MT53E2G32D4DE-046 AIT:C
+Lista de MateriaisDRAM LPDDR4 64Gbit 32 200/264 TFBGA 4 IT
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FabricanteMicron
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Peça do Fabricante #MT53E2G32D4DE-046 AIT:C
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Especificações
| Atributo | Valor |
| Packaging | Tray |
| Standard Pack Qty | 1360 |
Visão Geral
Description
The MT53E2G32D4DE-046 AIT:C is a LPDDR4X SDRAM chip from Micron Technology, designed for high-performance, low-power applications like smartphones and tablets.
Key Features:
- Capacity: 16Gb (2GB)
- Organization: 32-bit bus, 4 banks
- Speed: Up to 4266 Mbps (LPDDR4X-4266)
- Voltage: 1.8V (VDD) and 1.1V (VDDQ)
- Package: FBGA (Fine-pitch Ball Grid Array)
Applications: Mobile devices, embedded systems, and power-sensitive applications requiring fast, efficient memory.
The "AIT:C" suffix indicates specific speed grade, revision, or packaging details. For exact specs, refer to Micron’s datasheet.
Key Features:
- Capacity: 16Gb (2GB)
- Organization: 32-bit bus, 4 banks
- Speed: Up to 4266 Mbps (LPDDR4X-4266)
- Voltage: 1.8V (VDD) and 1.1V (VDDQ)
- Package: FBGA (Fine-pitch Ball Grid Array)
Applications: Mobile devices, embedded systems, and power-sensitive applications requiring fast, efficient memory.
The "AIT:C" suffix indicates specific speed grade, revision, or packaging details. For exact specs, refer to Micron’s datasheet.
Equivalent
The MT53E2G32D4DE-046 AIT:C is a 16Gb LPDDR4X DRAM chip from Micron. Equivalent alternatives include:
- Samsung: K4U6E3S4AA-MGCL
- SK Hynix: H9HCNNNBKMMLXR-NEE
- Micron (other variants): MT53E1G32D2NP-046 AIT:C
These are LPDDR4X chips with similar specs (32-bit bus, 4266 Mbps speed). Always verify compatibility for your specific application.
- Samsung: K4U6E3S4AA-MGCL
- SK Hynix: H9HCNNNBKMMLXR-NEE
- Micron (other variants): MT53E1G32D2NP-046 AIT:C
These are LPDDR4X chips with similar specs (32-bit bus, 4266 Mbps speed). Always verify compatibility for your specific application.
Features
The MT53E2G32D4DE-046 AIT:C is a LPDDR4X SDRAM chip from Micron with the following key features:
- Capacity: 16Gb (2GB)
- Organization: 2G x 32-bit (4-channel die)
- Speed: 4266 Mbps (LPDDR4X-4266)
- Voltage: 1.8V (VDD) & 0.6V (VDDQ) for low power
- Density per die: 16Gb
- Package: FBGA (Fine-pitch Ball Grid Array)
- Operating Temp: Commercial (0°C to 95°C)
- Features:
- Low-power design (LPDDR4X)
- On-die ECC (Error Correction Code)
- Bank Group Architecture for high bandwidth
- CA parity & Write CRC for reliability
Designed for mobile, automotive, and embedded applications, it offers high performance with reduced power consumption.
- Capacity: 16Gb (2GB)
- Organization: 2G x 32-bit (4-channel die)
- Speed: 4266 Mbps (LPDDR4X-4266)
- Voltage: 1.8V (VDD) & 0.6V (VDDQ) for low power
- Density per die: 16Gb
- Package: FBGA (Fine-pitch Ball Grid Array)
- Operating Temp: Commercial (0°C to 95°C)
- Features:
- Low-power design (LPDDR4X)
- On-die ECC (Error Correction Code)
- Bank Group Architecture for high bandwidth
- CA parity & Write CRC for reliability
Designed for mobile, automotive, and embedded applications, it offers high performance with reduced power consumption.
Pinout
The MT53E2G32D4DE-046 AIT:C is a LPDDR4X SDRAM chip with the following specifications:
- Pin Count: 200-ball FBGA (Fine-Pitch Ball Grid Array).
- Capacity: 8Gb (1GB) organized as 2G x 32-bit.
- Speed: 4266 Mbps (LPDDR4X-4266).
- Voltage: VDD2 = 1.1V, VDDQ = 0.6V.
- Functions: High-speed, low-power mobile memory for smartphones, tablets, and embedded systems.
Key features include dual-channel architecture, on-die ECC, and low-power auto self-refresh.
- Pin Count: 200-ball FBGA (Fine-Pitch Ball Grid Array).
- Capacity: 8Gb (1GB) organized as 2G x 32-bit.
- Speed: 4266 Mbps (LPDDR4X-4266).
- Voltage: VDD2 = 1.1V, VDDQ = 0.6V.
- Functions: High-speed, low-power mobile memory for smartphones, tablets, and embedded systems.
Key features include dual-channel architecture, on-die ECC, and low-power auto self-refresh.
Application
The MT53E2G32D4DE-046 AIT:C is a LPDDR4X SDRAM chip primarily used in:
1. Mobile Devices – Smartphones, tablets for high-speed, low-power memory.
2. Embedded Systems – IoT, wearables requiring efficient performance.
3. Automotive Electronics – Infotainment, ADAS for reliable operation.
4. Consumer Electronics – Smart TVs, gaming handhelds.
5. Industrial Applications – Ruggedized devices needing stable memory.
Its low power consumption (LPDDR4X) and high bandwidth make it ideal for compact, energy-efficient designs.
1. Mobile Devices – Smartphones, tablets for high-speed, low-power memory.
2. Embedded Systems – IoT, wearables requiring efficient performance.
3. Automotive Electronics – Infotainment, ADAS for reliable operation.
4. Consumer Electronics – Smart TVs, gaming handhelds.
5. Industrial Applications – Ruggedized devices needing stable memory.
Its low power consumption (LPDDR4X) and high bandwidth make it ideal for compact, energy-efficient designs.
Package
The MT53E2G32D4DE-046 AIT:C is a LPDDR4X SDRAM memory package. It uses a 200-ball FBGA (Fine-pitch Ball Grid Array) package type, specifically FBGA-200. This compact, high-density package is designed for mobile and low-power applications, offering efficient performance and reduced power consumption. The "AIT:C" suffix typically denotes specific speed, timing, or revision details.
