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NJT4030PT1G
+Lista de MateriaisTRANS PNP 40V 3A SOT223
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Fabricanteonsemi
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Peça do Fabricante #NJT4030PT1G
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Pacote SOT-223
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Em Estoque4593
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Especificações
| Atributo | Valor |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Part Status | Active |
| Transistor Type | PNP |
| Current - Collector(Ic)(Max) | 3 A |
| Voltage - Collector Emitter Breakdown(Max) | 40 V |
| Vce Saturation(Max) @ Ib Ic | 500mV @ 300mA, 3A |
| Current - Collector Cutoff(Max) | 100nA (ICBO) |
| DC Current Gain(h FE)(Min) @ Ic Vce | 200 @ 1A, 1V |
| Power - Max | 2 W |
| Frequency - Transition | 160MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Visão Geral
Description
This MOSFET comes in a compact package, which is beneficial for high-density circuit designs. It is commonly used in DC-DC converters, power management circuits, and other electronic applications where fast switching and compact size are crucial. Additionally, the device is built to handle thermal and electrical stress effectively, making it reliable for use in various environmental conditions. Always refer to the specific datasheet for detailed electrical characteristics and ensure it fits your design requirements.
Equivalent
Features
1. High Power Output: Capable of delivering significant power, making it suitable for RF and microwave applications.
2. Frequency Range: Operates effectively in the GHz range, typically utilized in communication systems and transmitters.
3. High Gain: Offers high gain to amplify weak signals effectively.
4. Efficiency: Designed for high efficiency, often featuring technology that reduces power loss.
5. Thermal Management: Built to handle high thermal loads, often including features for better heat dissipation.
6. Robust Construction: Made to withstand high voltages and currents, ensuring reliable performance under varying conditions.
7. Package Type: Available in specific package configurations for optimal integration into circuits.
8. Applications: Commonly used in wireless communication, broadcasting, radar, and other RF applications.
These features make the NJT4030PT1G a suitable choice for demanding RF power applications requiring reliability and efficiency.
Pinout
1. Gate (G) - This is the control terminal of the MOSFET, where a voltage applied determines the conduction state of the device.
2. Drain (D) - This is the terminal where the load current enters the device.
3. Source (S) - This is where the current exits the device and is usually connected to the ground in most applications.
The tab, which is also part of the package, is connected internally to the Drain and may be used for heat dissipation. The NJT4030PT1G is commonly used for switching applications in power supplies and other power management circuits.
Manufacturer
onsemi is known for its innovation in power and signal management technologies, which help in reducing energy consumption and improving efficiency in electronic devices. The company's solutions aim at enabling smarter, faster, and more efficient electronic products. As a global company, onsemi has a significant presence in key markets worldwide, providing integrated technology solutions to both large and small enterprises.