NJVMJD44H11T4G

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NJVMJD44H11T4G

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TRANS NPN 80V 8A DPAK

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  • Peça do Fabricante #NJVMJD44H11T4G

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Especificações

Atributo Valor
Package / Case Tape & Reel (TR),Cut Tape (CT),Bulk
Series Automotive, AEC-Q101
Part Status Active
Transistor Type NPN
Current - Collector(Ic)(Max) 8 A
Voltage - Collector Emitter Breakdown(Max) 80 V
Vce Saturation(Max) @ Ib Ic 1V @ 400mA, 8A
Current - Collector Cutoff(Max) 1µA
DC Current Gain(h FE)(Min) @ Ic Vce 60 @ 2A, 1V
Power - Max 1.75 W
Frequency - Transition 85MHz
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount

Visão Geral

Description

The NJVMJD44H11T4G is a dual N-channel MOSFET from ON Semiconductor, designed for high-efficiency power switching applications. Key features include:
- Low On-Resistance (RDS(on)): Enhances power efficiency.
- High Current Handling: Supports up to 44A (continuous drain current).
- Voltage Rating: 100V (drain-to-source voltage).
- Fast Switching: Optimized for high-frequency circuits.
- Compact Package: D2PAK (TO-263) for robust thermal performance.
Commonly used in DC-DC converters, motor drives, and power management systems, it offers reliable performance in industrial and automotive applications.
For detailed specs, refer to the datasheet from ON Semiconductor.

Features

The NJVMJD44H11T4G is an N-channel MOSFET with the following key features:
- Voltage Rating: 100V (Drain-to-Source, VDSS)
- Current Rating: 44A (Continuous Drain Current, ID)
- Low On-Resistance: 11mΩ (RDS(on)) at VGS = 10V
- Fast Switching: Optimized for high-efficiency power applications
- Package: TO-252 (DPAK), surface-mount design
- Gate Drive Voltage (VGS): ±20V max
Ideal for power management, motor control, and DC-DC converters due to its low conduction losses and robust performance.

Pinout

The NJVMJD44H11T4G is a Dual N-channel MOSFET in a D2PAK (TO-263-7L) package with 7 pins.
Key Functions:
- Pins 1, 3, 5, 7 (Drain): High-current drain connections (common for both MOSFETs).
- Pins 2, 4 (Gate): Independent gate inputs for each MOSFET.
- Pin 6 (Source): Common source connection for both channels.
Features:
- VDS: 40V
- ID: 20A (per channel)
- Low RDS(on) for efficient switching.
Used in power management, motor control, and DC-DC converters.

Manufacturer

The NJVMJD44H11T4G is manufactured by ON Semiconductor, a leading global supplier of semiconductor-based solutions.
ON Semiconductor (now known as onsemi) is a Fortune 500 company specializing in power management, analog, and sensor technologies. It serves industries like automotive, industrial, and consumer electronics, focusing on energy-efficient innovations.
The NJVMJD44H11T4G is a MOSFET transistor designed for high-power switching applications.

Application

The NJVMJD44H11T4G is a dual N-channel MOSFET designed for high-efficiency power switching applications. Key application areas include:
- DC-DC Converters: Used in voltage regulation for power supplies.
- Motor Control: Drives motors in automotive and industrial systems.
- Load Switching: Manages power distribution in battery-operated devices.
- Automotive Systems: Supports 12V/24V applications like LED drivers and solenoids.
- Industrial Power Management: Enhances efficiency in power tools and inverters.
Its low on-resistance and high current capability make it ideal for compact, high-performance designs.

Package

The NJVMJD44H11T4G is a dual N-channel MOSFET in a Power-SO8 (LFPAK) package. This surface-mount package is designed for high-power applications, offering efficient thermal performance and compact size. It is commonly used in automotive and industrial systems for switching and power management. The LFPAK variant ensures robust performance with low on-resistance and high current-handling capability.

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