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NTH4L040N120M3S
+Lista de MateriaisSILICON CARBIDE (SIC) MOSFET ELI
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Peça do Fabricante #NTH4L040N120M3S
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Ficha Técnica NTH4L040N120M3S DataSheet
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Especificações
| Atributo | Valor |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 54A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Rds On (Max) @ Id, Vgs | 54mOhm @ 20A, 18V |
| Vgs(th) (Max) @ Id | 4.4V @ 10mA |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 18 V |
| Vgs (Max) | +22V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 800 V |
| Power Dissipation (Max) | 231W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-4L |
| Package / Case | TO-247-4 |
Visão Geral
Description
The NTH4L040N120M3S is a high-performance N-channel MOSFET designed for various power management applications. Manufactured by ON Semiconductor, it features a low R_DS(on) for efficient operation, making it suitable for power conversion, switching applications, and motor control. With a maximum drain-source voltage (V_DS) of 120V and a continuous drain current (I_D) of 40A, it is capable of handling significant loads while maintaining thermal efficiency.
Key characteristics include fast switching speeds, which enhance system responsiveness and reduce energy loss. The device is housed in a TO-247 package, providing good thermal performance and ease of mounting. It also incorporates a built-in gate protection resistor to improve reliability in circuit designs.
With its robust performance specifications, the NTH4L040N120M3S is ideal for use in industrial, automotive, and consumer electronic systems where efficiency and reliability are critical. Proper thermal management and circuit design are essential to fully leverage its capabilities.
Key characteristics include fast switching speeds, which enhance system responsiveness and reduce energy loss. The device is housed in a TO-247 package, providing good thermal performance and ease of mounting. It also incorporates a built-in gate protection resistor to improve reliability in circuit designs.
With its robust performance specifications, the NTH4L040N120M3S is ideal for use in industrial, automotive, and consumer electronic systems where efficiency and reliability are critical. Proper thermal management and circuit design are essential to fully leverage its capabilities.
Equivalent
The NTH4L040N120M3S is a N-channel MOSFET commonly used in power applications. Equivalent products include the IRF1405, STP140NF20, and BSS138. Always verify specifications such as voltage, current ratings, R_DS(on), and packaging to ensure compatibility for your specific application.
Features
The NTH4L040N120M3S is a high-performance N-channel MOSFET designed for power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 120V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of 40A, which is ideal for high-current applications.
3. R_DS(on): Low on-resistance (R_DS(on)) results in minimal power loss and increased efficiency during operation.
4. Fast Switching: Designed for fast switching speeds, it enhances performance in high-frequency applications.
5. Thermal Characteristics: It offers good thermal performance with a low thermal resistance, allowing effective heat dissipation.
6. Package Type: Available in a TO-220 package, facilitating easy mounting and effective heat management.
Overall, the NTH4L040N120M3S is suitable for applications in power supplies, motor drives, and other high-efficiency power circuits.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 120V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of 40A, which is ideal for high-current applications.
3. R_DS(on): Low on-resistance (R_DS(on)) results in minimal power loss and increased efficiency during operation.
4. Fast Switching: Designed for fast switching speeds, it enhances performance in high-frequency applications.
5. Thermal Characteristics: It offers good thermal performance with a low thermal resistance, allowing effective heat dissipation.
6. Package Type: Available in a TO-220 package, facilitating easy mounting and effective heat management.
Overall, the NTH4L040N120M3S is suitable for applications in power supplies, motor drives, and other high-efficiency power circuits.
Pinout
The NTH4L040N120M3S is a N-channel MOSFET designed for power management applications. It features a total of 6 pins. The primary functions of these pins are as follows:
1. Gate (G): Controls the operation of the MOSFET; applying a voltage here turns the device on or off.
2. Drain (D): The output terminal where the current flows out; connects to the load.
3. Source (S): The terminal through which current enters the MOSFET; typically connected to ground in low-side switching applications.
The other pins may include a body diode internally, which allows current to flow from the source to the drain when the MOSFET is off, providing necessary protection and functionality in various applications.
It's commonly used in applications like DC-DC converters, motor drives, and other switching applications due to its low on-resistance and high efficiency. For specific circuit designs, refer to the datasheet for detailed characteristics and pin configurations.
1. Gate (G): Controls the operation of the MOSFET; applying a voltage here turns the device on or off.
2. Drain (D): The output terminal where the current flows out; connects to the load.
3. Source (S): The terminal through which current enters the MOSFET; typically connected to ground in low-side switching applications.
The other pins may include a body diode internally, which allows current to flow from the source to the drain when the MOSFET is off, providing necessary protection and functionality in various applications.
It's commonly used in applications like DC-DC converters, motor drives, and other switching applications due to its low on-resistance and high efficiency. For specific circuit designs, refer to the datasheet for detailed characteristics and pin configurations.
Manufacturer
The NTH4L040N120M3S is manufactured by ON Semiconductor, a prominent global supplier of semiconductor-based solutions. ON Semiconductor specializes in providing a wide range of products, including power management, analog, sensor, logic, timing, and application-specific integrated circuits (ASICs). The company serves various industries, such as automotive, industrial, telecommunications, consumer electronics, and computing.
ON Semiconductor is known for its focus on energy-efficient innovations and sustainable practices. They design and manufacture a diverse array of products aimed at improving the performance and efficiency of electronic systems. The NTH4L040N120M3S is specifically a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power applications, which aligns with the company's commitment to providing advanced solutions for energy management.
Overall, ON Semiconductor plays a crucial role in the semiconductor industry and is recognized for its cutting-edge technology and solutions that enable smarter, greener electronics.
ON Semiconductor is known for its focus on energy-efficient innovations and sustainable practices. They design and manufacture a diverse array of products aimed at improving the performance and efficiency of electronic systems. The NTH4L040N120M3S is specifically a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power applications, which aligns with the company's commitment to providing advanced solutions for energy management.
Overall, ON Semiconductor plays a crucial role in the semiconductor industry and is recognized for its cutting-edge technology and solutions that enable smarter, greener electronics.
Application
The NTH4L040N120M3S is a high-performance N-channel MOSFET widely used in various applications, including:
1. Power Management: Ideal for DC-DC converters and voltage regulators.
2. Switching Applications: Suitable for high-speed switching in power supplies.
3. Motor Control: Utilized in driving motors for industrial and automotive applications.
4. Load Switching: Effective for managing loads in consumer electronics.
5. Telecommunications: Used in RF amplifiers and related circuitry.
Its low on-resistance and high current-carrying capability make it suitable for efficient power handling in these areas.
1. Power Management: Ideal for DC-DC converters and voltage regulators.
2. Switching Applications: Suitable for high-speed switching in power supplies.
3. Motor Control: Utilized in driving motors for industrial and automotive applications.
4. Load Switching: Effective for managing loads in consumer electronics.
5. Telecommunications: Used in RF amplifiers and related circuitry.
Its low on-resistance and high current-carrying capability make it suitable for efficient power handling in these areas.
Package
The NTH4L040N120M3S is a power MOSFET packaged in a surface mount form factor, specifically in a DPAK (TO-252) package type. This package is designed for efficient thermal management and ease of integration onto PCBs in various applications.
