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NTMFS5C410NT1G
+Lista de MateriaisNTMFS5C410N - SINGLE N-CHANNEL P
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Fabricanteonsemi
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Peça do Fabricante #NTMFS5C410NT1G
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Pacote SO-8
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Em Estoque4993
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Especificações
| Atributo | Valor |
| Package / Case | Bulk |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain(Id) @ 25°C | 46A (Ta), 300A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 0.92mOhm @ 50A, 10V |
| Vgs(th)(Max) @ Id | 3.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 86 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 6100 pF @ 25 V |
| Power Dissipation (Max) | 3.9W (Ta), 166W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
Visão Geral
Description
1. N-Channel MOSFET: It uses electrons as the charge carriers, typically preferred for high-speed switching applications.
2. Low On-Resistance: This feature enhances efficiency by reducing power loss during operation, making it suitable for power-sensitive applications.
3. High Current Capacity: It can handle a significant amount of current, which is useful for high-power applications.
4. Compact Design: The device is available in a small package, making it ideal for space-constrained applications.
5. Applications: Commonly used in power supplies, motor controllers, and other applications requiring efficient power handling.
6. Enhanced Performance: Often includes features such as over-temperature protection and low gate charge for better performance.
This MOSFET is a versatile component catering to the needs of modern electronic circuits, focusing on efficiency and reliability.
Equivalent
1. Vishay SiRA14BDP-T1-GE3
2. Infineon BSC026N08NS5
3. Texas Instruments CSD18563Q5A
4. Alpha & Omega Semiconductor AON7528
Ensure compatibility by checking key specifications like voltage rating, current capacity, and package type before substitution.
Features
1. N-Channel MOSFET: It features an N-channel configuration, suitable for switching and amplification tasks.
2. Voltage and Current Ratings: It typically supports a drain-source voltage (V_DS) of 40V and a continuous drain current (I_D) around 82A, making it suitable for high-power applications.
3. Low On-Resistance: The MOSFET offers low on-resistance, which minimizes power loss and enhances efficiency.
4. Package Type: It is available in a compact, surface-mounted package, often a PowerPAK SO-8, which is ideal for space-constrained designs.
5. Thermal Performance: The design supports efficient thermal management, crucial for maintaining performance under high loads.
6. Applications: It is commonly used in DC-DC converters, power management, motor control, and other applications requiring efficient power handling.
These features make the NTMFS5C410NT1G a versatile component for designers looking for efficiency and reliability in power management applications.
Pinout
Key specifications include low on-state resistance (R_DS(on)), which minimizes power loss, and high current-carrying capability. The device is designed to handle high levels of voltage and current efficiently, making it suitable for use in a variety of electronic circuits that require reliable power switching. Its compact size and high efficiency are beneficial for applications where space and power efficiency are critical.