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NTMFS5C430NLT1G
+Lista de MateriaisMOSFET N-CH 40V 200A 5DFN
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Fabricanteonsemi
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Peça do Fabricante #NTMFS5C430NLT1G
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Pacote SO-8
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Especificações
| Atributo | Valor |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain(Id) @ 25°C | 200A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 1.5mOhm @ 50A, 10V |
| Vgs(th)(Max) @ Id | 2V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 70 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 4300 pF @ 20 V |
| Power Dissipation (Max) | 3.8W (Ta), 110W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
Visão Geral
Description
Key features of the NTMFS5C430NLT1G include low on-resistance, which improves efficiency by minimizing power loss, and a high threshold voltage, which enhances its performance in switching applications. It is typically used in DC-DC converters, power supply units, and other applications where efficient power handling is crucial.
The MOSFET is part of a series that supports diverse applications, offering reliability and robustness under various operating conditions. It is ideal for professionals looking for a balance between performance and space-saving design in their electronic projects.
Equivalent
1. Infineon: BSC093N04LS
2. Vishay: SiRA80DP
3. Nexperia: PSMN4R8-40YS
Always verify specifications such as Vds, Id, Rds(on), and package to ensure compatibility for your application.
Features
1. Low On-Resistance: It offers minimal on-resistance, which is approximately 1.5 mΩ at 10V, reducing power loss and improving efficiency.
2. High Current Capability: The device can handle continuous currents up to 197 A, making it suitable for high-power applications.
3. Compact Package: It is housed in a compact, surface-mount SO-8FL package, which is ideal for space-constrained designs.
4. Enhanced Thermal Performance: The MOSFET is designed to provide excellent thermal performance, helping to dissipate heat effectively and maintain reliability.
5. Fast Switching Speed: It supports fast switching speeds, enhancing performance in applications that require quick transitions.
6. Rugged Design: The device is built to withstand high voltages up to 40V, providing robustness for various applications.
7. RoHS Compliant: It meets environmental standards, making it a sustainable choice for eco-friendly designs.
These features make the NTMFS5C430NLT1G suitable for use in power supplies, motor control, and other high-power electronic devices.
Pinout
1. Pin Count:
- The NTMFS5C430NLT1G comes in a standard SO-8 (Small Outline) package, which typically has 8 pins.
2. Pin Functions:
- Gate (G): Controls the MOSFET's switching state. It is used to turn the MOSFET on or off.
- Drain (D): The output path for the current when the MOSFET is conducting. It connects to the load in a circuit.
- Source (S): The input path for the current, connected to the ground or return path in the circuit.
In this SO-8 package, multiple pins may be internally connected to the same terminal (e.g., the Drain or Source may be connected to several pins for better current handling and thermal performance). Always refer to the specific datasheet for detailed electrical characteristics and pin configuration.
Manufacturer
Application
1. DC-DC Converters: Used for step-down or step-up voltage applications.
2. Power Management: Integral in power supply circuits for electronic devices.
3. Motor Control: Utilized in controlling motors in consumer electronics and automotive systems.
4. Load Switches: Serves as a switch in managing power distribution.
5. Battery Management: Essential in circuits for charging and discharging batteries.
These applications take advantage of its low on-resistance and fast switching capabilities.