Imagens apenas para referência
NVGS5120PT1G
+Lista de MateriaisMOSFET P-CH 60V 1.8A 6TSOP
-
Fabricanteonsemi
-
Peça do Fabricante #NVGS5120PT1G
-
Pacote TSOP-6
-
Em Estoque2773
365 Garantia de Qualidade em 1 dia
7*24 Garantia de serviço em 24 horas
90-Garantia de pós-venda em 1 dia
Garantia de Produto Genuíno
Especificações
| Atributo | Valor |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101 |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 1.8A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 111mOhm @ 2.9A, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 18.1 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 942 pF @ 30 V |
| Power Dissipation (Max) | 600mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 6-TSOP |
Visão Geral
Description
The NVGS5120PT1G typically refers to a specific part number or component, often associated with semiconductor devices or electronic components. It is important to consult the manufacturer's datasheet or product documentation for precise details. These documents provide comprehensive information on specifications, characteristics, applications, and usage guidelines.
Generally, components with similar naming conventions might belong to categories like integrated circuits, transistors, or diodes. Key specifications could include voltage ratings, current capacities, packaging type, and operational temperature ranges. Applications vary widely, but such components might be used in power management, signal processing, or general electronic circuit functions.
For exact usage and integration instructions, always refer to the manufacturer's official documentation. This ensures compatibility and optimal performance in your specific application.
Generally, components with similar naming conventions might belong to categories like integrated circuits, transistors, or diodes. Key specifications could include voltage ratings, current capacities, packaging type, and operational temperature ranges. Applications vary widely, but such components might be used in power management, signal processing, or general electronic circuit functions.
For exact usage and integration instructions, always refer to the manufacturer's official documentation. This ensures compatibility and optimal performance in your specific application.
Features
The NVGS5120PT1G is a semiconductor device that typically features robust transient voltage suppression capabilities. Key features often include:
1. ESD Protection: Offers protection against electrostatic discharge, which is crucial for safeguarding sensitive electronic components.
2. Low Clamping Voltage: Provides effective clamping of voltage surges to prevent damage to the circuitry.
3. Fast Response Time: Responds quickly to voltage spikes, ensuring minimal impact on the protected circuit.
4. Compact Package: Available in a small SOD-123FL package, suitable for space-constrained applications.
5. Bidirectional Configuration: Capable of handling both positive and negative voltage transients, adding versatility.
6. Low Leakage Current: Designed to minimize leakage current, improving energy efficiency.
7. Peak Power Capability: Can withstand high peak power levels for short durations, typically associated with transient events.
These features make the NVGS5120PT1G suitable for use in various applications, including consumer electronics, telecommunications, and automotive systems, where protection against voltage transients is critical.
1. ESD Protection: Offers protection against electrostatic discharge, which is crucial for safeguarding sensitive electronic components.
2. Low Clamping Voltage: Provides effective clamping of voltage surges to prevent damage to the circuitry.
3. Fast Response Time: Responds quickly to voltage spikes, ensuring minimal impact on the protected circuit.
4. Compact Package: Available in a small SOD-123FL package, suitable for space-constrained applications.
5. Bidirectional Configuration: Capable of handling both positive and negative voltage transients, adding versatility.
6. Low Leakage Current: Designed to minimize leakage current, improving energy efficiency.
7. Peak Power Capability: Can withstand high peak power levels for short durations, typically associated with transient events.
These features make the NVGS5120PT1G suitable for use in various applications, including consumer electronics, telecommunications, and automotive systems, where protection against voltage transients is critical.
Pinout
The NVGS5120PT1G is a MOSFET device from ON Semiconductor. It typically comes in a SOT-23 package, which generally has a pin count of three. The three pins are typically configured as follows:
1. Gate: The gate terminal is where the input signal is applied to control the MOSFET.
2. Source: The source terminal is connected to the ground or the reference point in the circuit.
3. Drain: The drain terminal is where the output is taken from; it connects to the load.
The primary function of the NVGS5120PT1G is to act as a switch or amplifier in electronic circuits, utilizing its MOSFET properties to manage power delivery efficiently. It is used in various applications including power management, motor control, and signal processing due to its capability to handle high-frequency signals with low power loss. Always refer to the specific datasheet for detailed functions and specifications.
1. Gate: The gate terminal is where the input signal is applied to control the MOSFET.
2. Source: The source terminal is connected to the ground or the reference point in the circuit.
3. Drain: The drain terminal is where the output is taken from; it connects to the load.
The primary function of the NVGS5120PT1G is to act as a switch or amplifier in electronic circuits, utilizing its MOSFET properties to manage power delivery efficiently. It is used in various applications including power management, motor control, and signal processing due to its capability to handle high-frequency signals with low power loss. Always refer to the specific datasheet for detailed functions and specifications.
Manufacturer
The NVGS5120PT1G is manufactured by ON Semiconductor, which is now known as onsemi. Onsemi is a leading semiconductor manufacturer that focuses on intelligent power and sensing technologies. The company provides a wide range of products including power management, analog, sensors, logic, timing, connectivity, discrete, SoC, and custom devices. Onsemi serves various markets such as automotive, industrial, cloud, and IoT, aiming to enable energy-efficient solutions and help customers solve design challenges.
Application
The NVGS5120PT1G is a voltage-controlled oscillator (VCO) designed for radio frequency applications. It is commonly used in communication systems, including wireless base stations, RF modules, and transceivers. Its ability to generate stable and precise frequencies makes it suitable for frequency synthesis in phase-locked loops (PLLs). Additionally, it may be used in test and measurement equipment, radar systems, and any application requiring signal generation or frequency modulation. Its compact design and surface-mount package make it ideal for modern, high-density electronic designs.
Package
The NVGS5120PT1G is typically available in a SOT-23 package, which is a small, surface-mount package commonly used for electronic components.
