NVMFS5A140PLZWFT1G

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NVMFS5A140PLZWFT1G

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MOSFET P-CH 40V 20A/140A 5DFN

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Especificações

Atributo Valor
Supplier onsemi
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series Automotive, AEC-Q101
Part Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain(Id) @ 25°C 20A (Ta), 140A (Tc)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V
Rds On(Max) @ Id Vgs 4.2mOhm @ 50A, 10V
Vgs(th)(Max) @ Id 2.6V @ 1mA
Gate Charge(Qg)(Max) @ Vgs 136 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 7400 pF @ 20 V
Power Dissipation (Max) 3.8W (Ta), 200W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL)

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Description

The NVMFS5A140PLZWFT1G is a specific model of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by ON Semiconductor. As a power MOSFET, it is designed for efficient switching and amplification in electronic circuits. The device is notable for its low on-resistance and high current carrying capability, which makes it suitable for applications requiring efficient power management and thermal performance.
Key characteristics of the NVMFS5A140PLZWFT1G include:
1. Low On-Resistance: It provides efficient current flow with minimal power loss, making it ideal for energy-sensitive applications.
2. High Current Handling: Capable of handling significant current loads, it supports high-performance power supply designs.
3. Compact Package: Available in a small footprint, allowing for integration into compact circuit boards.
4. Enhanced Thermal Efficiency: Designed for effective heat dissipation, improving reliability and performance under load.
This MOSFET is commonly used in automotive, industrial, and consumer electronics, where efficient power control and thermal management are crucial.

Equivalent

The NVMFS5A140PLZWFT1G is a power MOSFET made by ON Semiconductor. Equivalent products from other manufacturers may include similar N-channel MOSFETs with comparable voltage, current ratings, and package type. Consider products like the Vishay SiR662DP, Infineon BSC100N06LS5, or Toshiba TPH1R306PL. Always compare the specific electrical characteristics and package details to ensure compatibility.

Features

The NVMFS5A140PLZWFT1G is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient switching and power management applications. Key features include:
1. Low On-Resistance: Offers low R_DS(on) for improved efficiency, reducing power loss during operation.
2. High-Speed Switching: Facilitates rapid switching, enhancing performance in applications such as DC-DC converters and power supplies.
3. Thermal Performance: Designed for excellent thermal resistance, allowing effective heat dissipation and reliable operation under high current loads.
4. Compact Package: Comes in a small form factor, making it suitable for space-constrained designs.
5. Automotive-Grade: AEC-Q101 qualified, ensuring reliability and durability in automotive environments.
6. Enhanced Safe Operating Area (SOA): Provides a robust operating range, ensuring stable performance under varying conditions.
7. Logic Level Gate Drive: Compatible with low voltage gate drive signals, simplifying integration with digital controllers.
These features make the NVMFS5A140PLZWFT1G suitable for use in power management, automotive, and industrial applications where efficiency and reliability are critical.

Pinout

The NVMFS5A140PLZWFT1G is a power MOSFET produced by ON Semiconductor. It is typically designed for load switching applications. This particular MOSFET comes in a compact SO-8FL package, which is a type of surface-mount package. The SO-8FL package generally features 8 pins, although not all pins may be used for distinct functions.
Key functions of this MOSFET include:
1. Drain (D): The terminal through which current flows out of the device. In load switching applications, this is typically connected to the load.

2. Gate (G): The terminal that controls the switching operation of the MOSFET. A voltage applied to the gate modulates the conductance between the drain and source.

3. Source (S): The terminal through which current enters the device. This is usually connected to the ground in load switching applications.
The NVMFS5A140PLZWFT1G supports high efficiency and fast switching. Its design enhances power management and thermal performance in compact spaces. For precise pin configuration and detailed specifications, always refer to the manufacturer's datasheet.

Manufacturer

The NVMFS5A140PLZWFT1G is manufactured by ON Semiconductor, also known as onsemi. ON Semiconductor is a global supplier of semiconductor-based solutions and operates within the technology sector. They provide a wide range of products, including power and signal management, logic, discrete, and custom devices for automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace, and power applications. The company focuses on energy-efficient innovations and solutions that help customers reduce global energy use.

Application

The NVMFS5A140PLZWFT1G is a power MOSFET designed for a variety of applications. It is commonly used in automotive systems for its high efficiency and reliability. Applications include power management in electric and hybrid vehicles, motor control systems, and DC-DC converters. It is also suitable for industrial applications such as power supplies, battery management, and load switching. Additionally, the component can be used in consumer electronics for efficient power delivery and management. Its features make it ideal for environments where space is constrained and high performance is required.

Package

The NVMFS5A140PLZWFT1G is a MOSFET transistor housed in a Power 56 package, also known as a 5x6mm DFN (Dual Flat No-leads) package. This package type allows for effective heat dissipation and compact design suitable for high-efficiency power management applications.

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