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NVMFS5C604NLAFT1G
+Lista de MateriaisMOSFET N-CH 60V 287A 5DFN
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Fabricanteonsemi
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Peça do Fabricante #NVMFS5C604NLAFT1G
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Pacote SO-8FL-4
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Especificações
| Atributo | Valor |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | Automotive, AEC-Q101 |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 287A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 1.2mOhm @ 50A, 10V |
| Vgs(th)(Max) @ Id | 2V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 52 nC @ 4.5 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 8900 pF @ 25 V |
| Power Dissipation (Max) | 200W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
Visão Geral
Description
### Key Features:
- Voltage Rating: 60V
- Current Rating: 50A (continuous)
- Low RDS(on): 5.3mΩ (max) @ 10V
- Fast Switching: Optimized for high-frequency applications
- Package: TO-263 (D2PAK), surface-mount
### Applications:
- DC-DC converters
- Motor drives
- Power supplies
- Battery management
This MOSFET offers low conduction losses and high thermal performance, making it suitable for automotive, industrial, and consumer electronics.
Features
- Low RDS(on): 5.6mΩ (max) at VGS = 10V, reducing conduction losses.
- High Current Handling: 60A continuous drain current (ID).
- Fast Switching: Low gate charge (Qg = 28nC typical) for efficient high-frequency operation.
- Robust Design: Avalanche energy rated, enhancing reliability in harsh conditions.
- Thermal Performance: Low thermal resistance (1.67°C/W) for better heat dissipation.
- Package: DFN5x6 (5mm x 6mm), compact and suitable for space-constrained designs.
Ideal for DC-DC converters, motor drives, and power management in automotive/industrial systems.
Pinout
- Pin Count: 8 (DFN-8 package)
- Function: N-channel MOSFET designed for high-efficiency power switching applications.
- Key Parameters:
- VDS: 60V
- ID: 50A (continuous)
- RDS(on): 4.2mΩ (max at VGS=10V)
- Applications: Used in DC-DC converters, motor control, and power management circuits.
This MOSFET is optimized for low on-resistance and high current handling, making it suitable for high-performance power electronics.
Application
- DC-DC Converters: Used in voltage regulation for servers, telecom, and industrial systems.
- Power Supplies: Enhances efficiency in AC-DC and DC-DC power modules.
- Motor Control: Supports brushless DC (BLDC) and servo motor drives.
- Automotive Systems: Applied in 48V mild hybrid systems and battery management.
- Renewable Energy: Optimizes solar inverters and energy storage solutions.
Its low on-resistance and fast switching make it ideal for high-frequency, high-efficiency designs.
