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SBC846BPDW1T2G
+Lista de MateriaisTRANS NPN/PNP 65V 0.1A SOT363
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Fabricanteonsemi
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Peça do Fabricante #SBC846BPDW1T2G
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Ficha Técnica SBC846BPDW1T2G DataSheet
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Especificações
| Atributo | Valor |
| Supplier | onsemi |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101 |
| Part Status | Active |
| Transistor Type | NPN, PNP |
| Current - Collector(Ic)(Max) | 100mA |
| Voltage - Collector Emitter Breakdown(Max) | 65V |
| Vce Saturation(Max) @ Ib Ic | 600mV @ 5mA, 100mA |
| Current - Collector Cutoff(Max) | 15nA (ICBO) |
| DC Current Gain(h FE)(Min) @ Ic Vce | 200 @ 2mA, 5V |
| Power - Max | 380mW |
| Frequency - Transition | 100MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Visão Geral
Description
The device features a high current gain and low saturation voltage, enhancing its efficiency in switching operations. It can handle moderate power levels, making it versatile for low-power applications in consumer electronics, signal processing, and more. This specific model is part of ON Semiconductor's portfolio, known for its reliability and performance in a range of temperature conditions.
Key specifications include a collector-emitter voltage (V_ce) of typically 65V, with a maximum collector current (I_c) of around 100mA. The SBC846BPDW1T2G is ideal for designers seeking a reliable, efficient, and compact transistor solution in various electronic designs.
Equivalent
Features
1. Type: NPN Bipolar Junction Transistor.
2. Package: SOT-363, a small outline surface-mounted package that suits compact designs.
3. Maximum Current (IC): Supports a collector current of up to 100 mA.
4. Voltage Ratings:
- Collector-Emitter Voltage (VCEO): 65V.
- Collector-Base Voltage (VCBO): 80V.
- Emitter-Base Voltage (VEBO): 6V.
5. Gain (hFE): Offers a DC current gain range, typically around 100 to 800 at a collector current of 2 mA.
6. Frequency: High transition frequency up to 100 MHz, making it suitable for high-speed switching applications.
7. Power Dissipation: Total power dissipation of up to 200 mW.
8. Temperature Range: Operates efficiently within a temperature range of -55°C to +150°C.
These specifications make the SBC846BPDW1T2G ideal for amplification and low-power switching purposes in various electronic circuits.
Pinout
- Pin Count: 6 pins in total.
- Function:
1. Emitter 1 (E1)
2. Base 1 (B1)
3. Collector 2 (C2)
4. Emitter 2 (E2)
5. Base 2 (B2)
6. Collector 1 (C1)
The SBC846BPDW1T2G is used in applications requiring high-speed switching and amplification. Each of its transistors can be utilized independently or together, depending on the circuit design requirements.
Manufacturer
Application
1. Signal Amplification: Often used in amplifiers for audio and RF signals due to its ability to handle low-level signals effectively.
2. Switching Applications: Suitable for switching loads in digital circuits, thanks to its fast switching speed.
3. Voltage Regulation: Utilized in circuits that require voltage stabilization and regulation.
4. Oscillators and Signal Processing: Employed in oscillator circuits and signal processing tasks.
5. Consumer Electronics: Found in televisions, radios, and other consumer gadgets for general amplification and switching needs.
These applications leverage its compact size, cost-effectiveness, and reliable performance.