SCT025W120G3-4AG

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SCT025W120G3-4AG

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TO247-4

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Especificações

Atributo Valor
Part Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Rds On (Max) @ Id, Vgs 37mOhm @ 25A, 18V
Vgs(th) (Max) @ Id 4.2V @ 5mA
Gate Charge (Qg) (Max) @ Vgs 73 nC @ 18 V
Vgs (Max) +18V, -5V
Input Capacitance (Ciss) (Max) @ Vds 1990 pF @ 800 V
Power Dissipation (Max) 388W (Tc)
Operating Temperature -55°C ~ 200°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Through Hole
Supplier Device Package TO-247-4
Package / Case TO-247-4
Packaging Tube

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Description

The SCT025W120G3-4AG is a high-performance silicon carbide (SiC) MOSFET designed for power electronics applications, particularly in energy-efficient systems such as converters and inverters. With a voltage rating of 1200V and a continuous current rating of 25A, this component is optimized for high switching speeds and low on-resistance, which enhances overall system efficiency and reduces heat generation.
Key features include fast switching capabilities, which enable higher frequency operation, and a robust thermal performance, making it suitable for demanding environments. The device is ideal for applications in renewable energy systems, electric vehicles, and industrial power supplies. The SCT025W120G3-4AG’s SiC technology allows for smaller form factors and lighter designs compared to traditional silicon-based devices, leading to more compact and efficient power solutions. Overall, it represents a cutting-edge option for engineers seeking to enhance the performance and reliability of their power conversion systems.

Equivalent

The SCT025W120G3-4AG chip is a SiC MOSFET used in power applications. Equivalent products include the Infineon IKW25N120T, ON Semiconductor MPS120N120, and Wolfspeed C3M0120120K. Check specifications like voltage rating, current handling, and gate drive requirements to ensure compatibility for your application.

Features

The SCT025W120G3-4AG is a silicon carbide (SiC) MOSFET, designed for high-efficiency power conversion applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 1200 V, making it suitable for high-voltage applications.
2. Current Rating: Capable of handling continuous drain currents of up to 25 A.
3. Low On-Resistance: It features a low R_DS(on), enhancing efficiency and reducing heat generation during operation.
4. Fast Switching: The device offers low gate charge and fast switching capabilities, which improve overall system performance and reduce switching losses.
5. Thermal Performance: High thermal conductivity allows for effective heat dissipation, supporting reliable operation even under demanding conditions.
6. Robustness: It is designed to withstand harsh environments, making it suitable for automotive and industrial applications.
These attributes make the SCT025W120G3-4AG ideal for applications like inverters, power supplies, and electric vehicle systems.

Pinout

The SCT025W120G3-4AG is a silicon carbide (SiC) MOSFET manufactured by Cree (Wolfspeed). It features a pin count of 4. The primary functions of this device include high-voltage switching, efficient power conversion, and fast switching capabilities, making it suitable for applications in power electronics, such as inverters, converters, and motor drives. The MOSFET is designed to handle high power levels with low on-state resistance, delivering improved efficiency in various applications, including renewable energy systems and industrial power supplies.

Manufacturer

The SCT025W120G3-4AG is manufactured by SCT (Silicon Carbide Technology). SCT specializes in the development and production of advanced semiconductor devices, particularly focusing on Silicon Carbide (SiC) technology. This company is known for its innovations in power electronics, offering products that enhance efficiency and performance in various applications, such as power supplies, renewable energy systems, electric vehicles, and industrial equipment.
Silicon Carbide is a key material for power devices due to its ability to operate at higher voltages, temperatures, and frequencies compared to traditional silicon-based devices. SCT's products cater to the growing demand for high-performance electronic components in modern technology applications. As a company, SCT is positioned in the semiconductor industry and plays a crucial role in advancing technologies that require robust and efficient power management solutions.

Application

The SCT025W120G3-4AG is a 1200V SiC MOSFET commonly used in applications such as power conversion, electric vehicles, renewable energy systems, and industrial motor drives. Its high efficiency and thermal performance make it suitable for switch-mode power supplies (SMPS), inverters, and high-frequency applications. Additionally, it is utilized in battery chargers and energy storage systems, enabling reduced losses and improved thermal management. Overall, this component enhances performance in high-voltage, high-temperature environments.

Package

The SCT025W120G3-4AG is packaged in a TO-247 format, which is a type of power semiconductor package designed for high voltage and high power applications.

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