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SI2302ADS-T1-E3
+Lista de MateriaisMOSFET N-CH 20V 2.1A SOT23-3
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FabricanteVishay Siliconix
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Peça do Fabricante #SI2302ADS-T1-E3
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Ficha Técnica SI2302ADS-T1-E3 DataSheet
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Pacote SOT-23-3
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Em Estoque7595
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Especificações
| Atributo | Valor |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Obsolete |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 20 V |
| Current-ContinuousDrain(Id)@25°C | 2.1A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 2.5V, 4.5V |
| RdsOn(Max)@IdVgs | 60mOhm @ 3.6A, 4.5V |
| Vgs(th)(Max)@Id | 1.2V @ 50µA |
| GateCharge(Qg)(Max)@Vgs | 10 nC @ 4.5 V |
| Vgs(Max) | ±8V |
| InputCapacitance(Ciss)(Max)@Vds | 300 pF @ 10 V |
| PowerDissipation(Max) | 700mW (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-23-3 (TO-236) |
Visão Geral
Description
### Key Features:
- Voltage Rating: -20V (Drain-Source)
- Current Rating: -4.3A (Continuous Drain Current)
- Low On-Resistance (RDS(on)): 45mΩ @ VGS = -4.5V
- Gate Threshold (VGS(th)): -0.7V (typical)
- Compact Package: SOT-23 (3-pin)
### Applications:
- Power management in portable devices
- Load switching in battery-powered systems
- DC-DC converters & low-side switching
### Advantages:
- Low power loss due to minimal RDS(on)
- Fast switching for efficiency
- Small footprint, ideal for space-constrained designs
This MOSFET is commonly used in consumer electronics, IoT devices, and power supplies where efficiency and compactness are critical.
Features
- Voltage Rating: -20V (Drain-to-Source, VDS)
- Current Rating: -4.3A (Continuous Drain Current, ID)
- Low On-Resistance: 50mΩ (max) at VGS = -4.5V
- Threshold Voltage (VGS(th)): -0.7V to -1.5V
- Fast Switching: Low gate charge (Qg) for efficient performance
- Package: SOT-23 (Compact surface-mount)
- Applications: Power management, load switching, battery protection
Ideal for low-voltage, high-efficiency circuits.
Pinout
1. Gate (G) – Controls the MOSFET's switching.
2. Source (S) – Connected to the input voltage (for P-channel).
3. Drain (D) – Output connection to the load.
Key Features:
- Voltage Rating: -20V (D-S)
- Current Rating: -4.3A (continuous)
- Low RDS(on): ~40mΩ (at VGS = -4.5V)
- Logic-Level Gate Drive (suitable for 3V/5V control).
Commonly used for power switching, load control, and DC-DC conversion in compact designs.
Manufacturer
The SI2302ADS-T1-E3 is a P-channel MOSFET designed for power management applications, commonly used in load switching, battery protection, and DC-DC conversion. Vishay's products are widely used in compact, energy-efficient designs.
Application
1. Power Management – Voltage regulation, load switching in portable devices.
2. Battery Protection – Reverse polarity and overcurrent protection.
3. DC-DC Converters – Efficient power conversion in low-voltage circuits.
4. Consumer Electronics – Smartphones, tablets, and wearables for power control.
5. Automotive Systems – Low-power applications like infotainment and lighting.
Its small SOT-23 package and low on-resistance make it ideal for space-constrained, energy-efficient designs.
