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MOSFET N-CH 100V 11.1A 8SO
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FabricanteVishay Siliconix
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Peça do Fabricante #SI4056DY-T1-GE3
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Ficha Técnica SI4056DY-T1-GE3 DataSheet
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Pacote SOIC-8
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Em Estoque6410
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Especificações
| Atributo | Valor |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 11.1A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 23mOhm @ 15A, 10V |
| Vgs(th)(Max) @ Id | 2.8V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 29.5 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 900 pF @ 50 V |
| Power Dissipation (Max) | 2.5W (Ta), 5.7W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOIC |
Visão Geral
Description
- Voltage Rating: -30V (drain-to-source).
- Current Handling: -5.8A (continuous drain current).
- Low On-Resistance: 50mΩ (max at VGS = -10V), enhancing efficiency.
- Compact Package: SO-8 (surface-mount), suitable for space-constrained designs.
It’s optimized for load switching, DC-DC conversion, and battery management in portable devices, automotive systems, and industrial controls. The T1-GE3 suffix indicates halogen-free, RoHS-compliant packaging.
Advantages: Low gate charge, fast switching, and thermal stability. Ideal for high-efficiency, low-loss applications.
For detailed specs, refer to the datasheet.
Equivalent
- TP4056 (common alternative, similar functionality)
- MCP73831 (Microchip, single-cell Li-ion charger)
- BQ24075 (TI, USB-compatible charger IC)
- LTC4054 (Analog Devices, linear Li-ion charger)
These offer comparable features like 5V input, single-cell charging, and overcharge protection. Verify pin compatibility and specs for your application.
Features
- Voltage Rating: -30V (Drain-Source)
- Current Rating: -5.8A (Continuous Drain Current)
- Low On-Resistance: 60mΩ (max) @ VGS = -10V
- Gate Threshold Voltage: -1V to -3V (typical)
- Fast Switching: Low gate charge (Qg = 12nC typical)
- Power Dissipation: 2.5W (max)
- Package: SOIC-8 (Compact surface-mount)
- Applications: Power management, load switching, battery protection
Designed for efficiency in portable electronics, power supplies, and DC-DC converters.
Pinout
Key Functions:
- P-Channel MOSFET (30V, 12A) for power switching.
- Low On-Resistance (RDS(on)): Typically 20mΩ (VGS = -10V).
- Logic-Level Gate Drive: Compatible with 5V/3.3V control signals.
- Applications: Load switching, power management, and battery protection.
Pinout (Simplified):
- Pins 1,2,3 (Drain): Connected internally.
- Pin 4 (Gate): Control input.
- Pins 5,6,7,8 (Source): Connected internally.
Compact and efficient for space-constrained designs.
Application
1. Power Management – Switching and load control in DC-DC converters.
2. Battery Protection – Reverse polarity and overcurrent protection in portable devices.
3. Motor Control – Driving small motors in automotive and industrial systems.
4. Consumer Electronics – Power switching in smartphones, tablets, and wearables.
5. Automotive Applications – Efficient power distribution in infotainment and lighting systems.
Its low on-resistance (RDS(on)) and compact package make it ideal for space-constrained, high-efficiency designs.
