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SI4288DY-T1-GE3
+Lista de MateriaisMOSFET 2N-CH 40V 9.2A 8SO
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FabricanteVishay Siliconix
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Peça do Fabricante #SI4288DY-T1-GE3
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Ficha Técnica SI4288DY-T1-GE3 DataSheet
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Pacote SOIC-8
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Especificações
| Atributo | Valor |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain(Id) @ 25°C | 9.2A |
| Rds On(Max) @ Id Vgs | 20mOhm @ 10A, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 15nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 580pF @ 20V |
| Power - Max | 3.1W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Visão Geral
Description
Key characteristics of the SI4288DY-T1-GE3 include a low on-resistance, which minimizes power loss and heat generation during operation, making it suitable for high-efficiency power management applications. It typically operates at a voltage range suitable for various circuits and is packaged in a compact form, often the SO-8 package, facilitating integration into printed circuit boards (PCBs).
The MOSFET is favored for applications where space is at a premium, and efficient power handling is critical, such as in DC-DC converters, load switches, and motor control systems. Its design allows for robust performance under demanding conditions, and it is often selected for both commercial and industrial applications.
Equivalent
Features
1. Low On-Resistance: It offers a low on-resistance, which helps reduce power loss and improve overall efficiency in circuits.
2. High Current Capacity: This MOSFET can handle substantial current loads, making it suitable for high-power applications.
3. Fast Switching Speed: The component supports rapid switching, essential for high-frequency applications and minimizing energy loss during transition periods.
4. Thermal Performance: It is designed to dissipate heat effectively, which enhances reliability and durability under high-power operations.
5. Compact Package: The SI4288DY-T1-GE3 comes in a compact package, making it suitable for space-constrained designs.
6. ESD Protection: Featuring built-in electrostatic discharge (ESD) protection, it helps safeguard the component and the circuit from static discharge damage.
7. Robust Design: It is built to withstand various environmental and electrical stresses, ensuring long-term performance in demanding conditions.
These features make the SI4288DY-T1-GE3 a versatile and reliable choice for designers looking for effective power management solutions in their electronic designs.
Pinout
1. Pin 1 (G - Gate): Used to control the operation of the MOSFET, allowing or preventing current flow from the drain to the source.
2. Pin 2 (D - Drain): Connected to the load and one terminal of the power supply.
3. Pin 3 (D - Drain): Another connection point for the drain, often internally connected to Pin 2 to handle higher currents.
4. Pin 4 (D - Drain): Additional drain connection to manage power dissipation.
5. Pin 5 (S - Source): Commonly connected to ground in N-channel MOSFETs.
6. Pin 6 (S - Source): Another terminal for the source, often internally linked to Pin 5.
7. Pin 7 (S - Source): Additional source connection, similar to Pin 6.
8. Pin 8 (S - Source): Another source terminal, completing the circuit.
This MOSFET is primarily used for switching applications and load management in power electronics.
Manufacturer
Vishay's components are widely used in various applications across different industries, including automotive, industrial, consumer electronics, telecommunications, military, aerospace, and medical. The company is known for its innovation in technology and commitment to providing high-quality, reliable products. Vishay operates manufacturing plants in several countries around the world, ensuring a robust supply chain and global presence.