SI4410BDY-T1-E3

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SI4410BDY-T1-E3

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MOSFET N-CH 30V 7.5A 8SO

  • FabricanteVishay Siliconix

  • Peça do Fabricante #SI4410BDY-T1-E3

  • Pacote SOIC-8

  • Em Estoque5987

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Especificações

Atributo Valor
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain(Id) @ 25°C 7.5A (Ta)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V
Rds On(Max) @ Id Vgs 13.5mOhm @ 10A, 10V
Vgs(th)(Max) @ Id 3V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 20 nC @ 5 V
Vgs(Max) ±20V
Power Dissipation (Max) 1.4W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC

Visão Geral

Description

The SI4410BDY-T1-E3 is a P-channel MOSFET from Vishay Siliconix, designed for power management applications. Key features include:
- Low On-Resistance (RDS(on)): Typically 10.5 mΩ at VGS = -10 V, enhancing efficiency.
- High Current Handling: Supports up to -30 A continuous drain current.
- Voltage Rating: -30 V drain-to-source voltage (VDS), suitable for low-voltage circuits.
- Compact Package: PowerPAK® SO-8, optimized for space-constrained designs.
Common uses include load switching, DC-DC conversion, and battery protection in portable electronics, power supplies, and automotive systems. Its low gate charge ensures fast switching, reducing power losses.
For detailed specs, refer to the datasheet or Vishay’s official documentation.

Equivalent

Equivalent products to the SI4410BDY-T1-E3 (P-channel MOSFET) include:
- IRF7416 (Vishay)
- FDS6679AZ (ON Semiconductor)
- AOD4185 (Alpha & Omega)
- SUD50P04-09L-E3 (Vishay)
These alternatives offer similar specifications (e.g., voltage, current, RDS(on)). Always verify datasheets for exact compatibility.

Features

The SI4410BDY-T1-E3 is an N-channel MOSFET with the following key features:
- Voltage Rating: 30V
- Current Rating: 12A (continuous)
- Low On-Resistance (RDS(on)): 4.5mΩ (max) @ VGS=10V
- Gate Threshold Voltage (VGS(th)): 1V (typical)
- Fast Switching: Low gate charge (Qg) for efficient performance
- Package: PowerPAK® SO-8 (compact, surface-mount design)
- Applications: Power management, DC-DC converters, motor control, and load switching
Designed for high efficiency and thermal performance, it’s ideal for space-constrained, high-current applications.

Application

The SI4410BDY-T1-E3 is a P-channel MOSFET commonly used in:
1. Power Management – Load switching, battery protection, and DC-DC converters.
2. Portable Electronics – Smartphones, tablets, and wearables for power control.
3. Automotive Systems – Infotainment, lighting, and power distribution.
4. Industrial Applications – Motor drives and power supply circuits.
5. Consumer Electronics – USB power switching and charging circuits.
Its low on-resistance (RDS(on)) and compact package make it ideal for efficient power handling in space-constrained designs.

Package

The SI4410BDY-T1-E3 is a P-channel MOSFET in a PowerPAK® SO-8 package. This compact surface-mount package offers efficient thermal performance and is commonly used in power management applications. It features a small footprint with exposed pads for enhanced heat dissipation.

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