SI4835DDY-T1-GE3

Imagens apenas para referência

SI4835DDY-T1-GE3

+Lista de Materiais

MOSFET P-CH 30V 13A 8SO

365 Garantia de Qualidade em 1 dia

7*24 Garantia de serviço em 24 horas

90-Garantia de pós-venda em 1 dia

Garantia de Produto Genuíno

Especificações

Atributo Valor
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain(Id) @ 25°C 13A (Tc)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V
Rds On(Max) @ Id Vgs 18mOhm @ 10A, 10V
Vgs(th)(Max) @ Id 3V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 65 nC @ 10 V
Vgs(Max) ±25V
Input Capacitance(Ciss)(Max) @ Vds 1960 pF @ 15 V
Power Dissipation (Max) 2.5W (Ta), 5.6W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC

Visão Geral

Description

The SI4835DDY-T1-GE3 is a P-channel MOSFET from Vishay Siliconix, designed for power management in compact, high-efficiency applications. Key features include:
- Voltage Rating: -30V (drain-to-source)
- Current Rating: -5.8A (continuous drain current)
- Low On-Resistance: 47mΩ (max at VGS = -10V)
- Compact Package: PowerPAK® SC-70 (3-pin), ideal for space-constrained designs
- Low Gate Charge (Qg): Enhances switching efficiency
Common applications include load switching, battery protection, and DC-DC conversion in portable electronics, IoT devices, and power supplies. Its T1-GE3 suffix indicates halogen-free, RoHS-compliant packaging.
This MOSFET is optimized for low-voltage, high-performance scenarios, balancing efficiency and thermal performance.

Equivalent

Equivalent products to the SI4835DDY-T1-GE3 (RF MOSFET) include:
- Infineon IPD90N04S4-04
- ON Semiconductor NTD4806N
- STMicroelectronics STL110N4F3
- Vishay SiR626DP
These alternatives offer similar specifications (e.g., 30V, 50A, low RDS(on)) for power switching applications. Verify compatibility for your design.

Features

The SI4835DDY-T1-GE3 is a P-channel MOSFET with the following key features:
- Voltage Rating: -30V (Drain-Source)
- Current Rating: -5.8A (Continuous Drain Current)
- Low On-Resistance: 47mΩ (max) at VGS = -10V
- Gate Threshold Voltage: -1V to -3V (VGS(th))
- Fast Switching: Low gate charge (Qg = 12nC typical)
- Power Efficiency: Low power loss for high-performance applications
- Package: DFN (3.3mm x 3.3mm), compact and space-saving
- Applications: Power management, load switching, battery protection
Designed for efficiency and reliability in portable and automotive systems.

Pinout

The SI4835DDY-T1-GE3 is a dual N-channel MOSFET in a PowerPAK® SO-8 package with 8 pins.
### Pin Functions:
- Pins 1, 2, 3 (Source 1, Gate 1, Drain 1): First MOSFET channel.
- Pins 6, 7, 8 (Drain 2, Gate 2, Source 2): Second MOSFET channel.
- Pins 4, 5: Typically no connection (NC) or thermal pad (exposed for heat dissipation).
### Key Features:
- 30V drain-source voltage (VDS)
- Low on-resistance (RDS(on)) for efficient power switching.
- Compact SO-8 footprint for space-constrained designs.
Used in power management, DC-DC converters, and load switching.

Application

The SI4835DDY-T1-GE3 is a dual N-channel MOSFET used in:
1. Power Management – DC-DC converters, voltage regulation.
2. Load Switching – Battery protection, power distribution.
3. Motor Control – Small motor drivers in consumer electronics.
4. Portable Devices – Smartphones, tablets, wearables.
5. Automotive Systems – Infotainment, lighting, sensors.
Its compact DFN-8 package and low on-resistance make it ideal for space-constrained, high-efficiency applications.

Package

The SI4835DDY-T1-GE3 comes in a DFN-8 (3x3mm) package. This compact, leadless surface-mount design is suitable for high-density PCB applications, offering good thermal and electrical performance. The package dimensions are 3mm x 3mm with a 0.65mm pitch.

Produtos relacionados a SI4835DDY-T1-GE3

  • Orçamento Rápido

  • Envie sua solicitação de orçamento para SI4835DDY-T1-GE3 Use este formulário. Responderemos em até 12 horas.