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SI5504BDC-T1-E3
+Lista de MateriaisMOSFET N/P-CH 30V 4A 1206-8
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FabricanteVishay Siliconix
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Peça do Fabricante #SI5504BDC-T1-E3
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Ficha Técnica SI5504BDC-T1-E3 DataSheet
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Pacote 8-SMD, Flat Lead
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Especificações
| Atributo | Valor |
| Supplier | Vishay Siliconix |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain(Id) @ 25°C | 4A, 3.7A |
| Rds On(Max) @ Id Vgs | 65mOhm @ 3.1A, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 7nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 220pF @ 15V |
| Power - Max | 3.12W, 3.1W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Visão Geral
Description
These components are typically used to maintain a constant voltage level by stepping down voltage from a higher level to a lower level, which is crucial for protecting sensitive electronic components in a circuit. They are found in various applications including consumer electronics, industrial systems, and automotive sectors.
For detailed specifications, performance characteristics such as input and output voltage range, current capacity, efficiency, and thermal performance would be given in the component's datasheet. This information helps engineers integrate the component effectively into their designs.
Equivalent
1. NXP PSMN7R0-30YL
2. Infineon BSC093N15NS5
3. ON Semiconductor NTMFS4935N
4. STMicroelectronics STS10NF30L
Ensure that the electrical characteristics and package types meet your specific requirements before considering them as direct replacements.
Features
1. Low On-Resistance: It offers low R_ds(on), enabling reduced power loss and improved efficiency in circuit designs.
2. Dual N-Channel Configuration: This configuration allows for versatile applications and efficient use in various power conversion tasks.
3. Compact Package: It typically comes in a small package, such as PowerPAK SO-8, which is beneficial for space-constrained applications.
4. High-Speed Switching: The MOSFET supports rapid switching speeds, suitable for high-frequency applications.
5. Thermal Performance: It includes features for efficient heat dissipation, making it reliable for high-power operations.
6. Applications: It is commonly used in DC-DC converters, load switches, and other power management circuits.
These features make the SI5504BDC-T1-E3 a suitable choice for designers seeking efficient, compact solutions for power control in electronics.