SI7157DP-T1-GE3

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SI7157DP-T1-GE3

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MOSFET P-CH 20V 60A PPAK SO-8

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Especificações

Atributo Valor
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain(Id) @ 25°C 60A (Tc)
Drive Voltage(Max Rds On Min Rds On) 2.5V, 10V
Rds On(Max) @ Id Vgs 1.6mOhm @ 25A, 10V
Vgs(th)(Max) @ Id 1.4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 625 nC @ 10 V
Vgs(Max) ±12V
Input Capacitance(Ciss)(Max) @ Vds 22000 pF @ 10 V
Power Dissipation (Max) 6.25W (Ta), 104W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8

Visão Geral

Description

The SI7157DP-T1-GE3 is a P-channel MOSFET from Vishay Siliconix, designed for power management applications. Key features include:
- Voltage Rating: -30V (drain-to-source).
- Current Handling: -8.5A (continuous drain current).
- Low On-Resistance (RDS(on)): 28mΩ (max at VGS = -10V), ensuring efficient power switching.
- Compact Package: PowerPAK® SO-8, suitable for space-constrained designs.
- Fast Switching: Optimized for high-efficiency DC-DC converters, load switches, and battery management.
Ideal for automotive, industrial, and consumer electronics, it offers low power loss and high reliability. Always refer to the datasheet for detailed specifications and application guidelines.

Pinout

The SI7157DP-T1-GE3 is a dual N-channel MOSFET in a PowerPAK® SO-8 package.
- Pin Count: 8 pins (standard SO-8 footprint).
- Function:
- Dual N-channel MOSFET (two independent MOSFETs in one package).
- Designed for high-efficiency power switching (e.g., DC-DC converters, motor control).
- Low on-resistance (RDS(on)) for reduced power loss.
- Common features: Logic-level gate drive, fast switching, and thermal protection.
Pins typically include dual source, gate, and drain connections (consult datasheet for exact pinout).

Package

The SI7157DP-T1-GE3 is a PowerPAK® SO-8 package, a compact surface-mount design optimized for high-power applications. It features low thermal resistance and efficient heat dissipation, making it suitable for power management in space-constrained designs. The package dimensions are typically 4.9mm x 3.9mm x 1.75mm.

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