Imagens apenas para referência
SI7942DP-T1-GE3
+Lista de MateriaisMOSFET 2N-CH 100V 3.8A PPAK SO-8
-
FabricanteVishay Siliconix
-
Peça do Fabricante #SI7942DP-T1-GE3
-
Ficha Técnica SI7942DP-T1-GE3 DataSheet
-
Pacote PowerPAK-SO-8
-
Em Estoque7284
365 Garantia de Qualidade em 1 dia
7*24 Garantia de serviço em 24 horas
90-Garantia de pós-venda em 1 dia
Garantia de Produto Genuíno
Especificações
| Atributo | Valor |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain(Id) @ 25°C | 3.8A |
| Rds On(Max) @ Id Vgs | 49mOhm @ 5.9A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 24nC @ 10V |
| Power - Max | 1.4W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Visão Geral
Description
### Key Features:
- Voltage Rating: -30V (drain-to-source).
- Current Rating: -8.5A (continuous drain current).
- Low On-Resistance (RDS(on)): 28mΩ (max) at VGS = -10V, ensuring minimal power loss.
- Compact Package: PowerPAK® SO-8, optimized for space-constrained designs.
- Logic-Level Gate Drive: Compatible with 3.3V/5V control signals.
### Applications:
- DC-DC converters
- Battery management systems
- Power switches in portable devices
This MOSFET offers high reliability, thermal efficiency, and fast switching performance, making it suitable for modern power electronics.
Equivalent
- IRF9Z34NPBF (Infineon)
- FQP27P06 (Fairchild/ON Semi)
- STP27P6F6 (STMicroelectronics)
- AOD4185 (Alpha & Omega)
These are similar P-channel MOSFETs with comparable voltage (30V-60V), current (20A-30A), and package (TO-252/DPAK) specs. Always verify datasheet parameters for exact compatibility.