SI7942DP-T1-GE3

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SI7942DP-T1-GE3

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MOSFET 2N-CH 100V 3.8A PPAK SO-8

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Especificações

Atributo Valor
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
Part Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain(Id) @ 25°C 3.8A
Rds On(Max) @ Id Vgs 49mOhm @ 5.9A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 24nC @ 10V
Power - Max 1.4W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount

Visão Geral

Description

The SI7942DP-T1-GE3 is a dual P-channel MOSFET from Vishay, designed for high-efficiency power management in applications like load switching, power distribution, and battery protection.
### Key Features:
- Voltage Rating: -30V (drain-to-source).
- Current Rating: -8.5A (continuous drain current).
- Low On-Resistance (RDS(on)): 28mΩ (max) at VGS = -10V, ensuring minimal power loss.
- Compact Package: PowerPAK® SO-8, optimized for space-constrained designs.
- Logic-Level Gate Drive: Compatible with 3.3V/5V control signals.
### Applications:
- DC-DC converters
- Battery management systems
- Power switches in portable devices
This MOSFET offers high reliability, thermal efficiency, and fast switching performance, making it suitable for modern power electronics.

Equivalent

Equivalent products to the SI7942DP-T1-GE3 (a Vishay P-channel MOSFET) include:
- IRF9Z34NPBF (Infineon)
- FQP27P06 (Fairchild/ON Semi)
- STP27P6F6 (STMicroelectronics)
- AOD4185 (Alpha & Omega)
These are similar P-channel MOSFETs with comparable voltage (30V-60V), current (20A-30A), and package (TO-252/DPAK) specs. Always verify datasheet parameters for exact compatibility.

Package

The SI7942DP-T1-GE3 is a PowerPAK® SO-8 dual N-channel MOSFET package. It features a compact, surface-mount design with enhanced thermal performance, making it suitable for high-efficiency power applications. The package dimensions are industry-standard SO-8, ensuring compatibility with automated assembly processes.

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