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SIA441DJ-T1-GE3
+Lista de MateriaisMOSFET P-CH 40V 12A PPAK SC70-6
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FabricanteVishay Siliconix
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Peça do Fabricante #SIA441DJ-T1-GE3
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Ficha Técnica SIA441DJ-T1-GE3 DataSheet
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Pacote SC-70
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Especificações
| Atributo | Valor |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain(Id) @ 25°C | 12A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 47mOhm @ 4.4A, 10V |
| Vgs(th)(Max) @ Id | 2.2V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 35 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 890 pF @ 20 V |
| Power Dissipation (Max) | 19W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SC-70-6 |
Visão Geral
Description
Key features of the SIA441DJ-T1-GE3 include low on-resistance, high-speed switching capabilities, and robust thermal performance. The low on-resistance reduces power loss during operation, enhancing the overall efficiency of the system. Its high-speed switching characteristics make it suitable for applications requiring fast response times, such as in power management and DC-DC converters.
The MOSFET also features a low gate charge, which minimizes the power required to drive the device, further improving efficiency. The SIA441DJ-T1-GE3 is typically used in applications like power management circuits, load switches, and motor control systems, where reliable performance and efficiency are critical.
Equivalent
1. NXP's PSMN015-30MLC
2. ON Semiconductor's NTD3055-150
3. Infineon's BSC123N08NS3
Always confirm the specifications, as equivalents may vary slightly in performance or characteristics.
Features
1. Dual N-Channel Configuration: This allows for effective handling of current and voltage, optimizing performance in compact designs.
2. Low On-Resistance: It features a low on-state resistance, which minimizes power dissipation and improves efficiency.
3. High-Speed Switching: The MOSFET supports high-speed switching, making it suitable for applications requiring fast response times.
4. Thermal Efficiency: It is designed to manage heat effectively, enhancing reliability in demanding environments.
5. Small Form Factor: The compact package is ideal for space-constrained applications, enabling dense circuit designs.
6. RoHS Compliant: Ensures it meets environmental and safety standards, making it a sustainable choice for electronic designs.
These features make the SIA441DJ-T1-GE3 suitable for various applications, including power management, DC-DC converters, and load switching.
Pinout
The SIA441DJ is a single N-channel MOSFET. The specific pin count for the PowerPAK SC-70 package is 6 pins. Here is a concise breakdown of its pin functions:
1. Drain (D1, D2, D3): The drain pins are internally connected to the same terminal inside the MOSFET and are located on one side of the package. They are used to conduct the current from the load.
2. Source (S): The source pin is where the current enters the MOSFET. It is located opposite the drain pins.
3. Gate (G): The gate pin is used to control the MOSFET's conduction state. By applying a voltage to the gate, the transistor is turned on or off, allowing or restricting current flow between the drain and source.
This MOSFET is known for its low on-resistance and fast switching capabilities, making it suitable for various high-efficiency power applications.
Manufacturer
Application
1. DC-DC Converters: Used in power management for efficient voltage regulation.
2. Load Switches: Suitable for controlling power to various loads in electronic devices.
3. Battery Management Systems: Helps in managing battery charging and discharging.
4. Motor Drives: Used in controlling small motors in consumer electronics.
5. Consumer Electronics: Applicable in devices like laptops and smartphones for power efficiency.
6. Telecommunications: Useful in infrastructure equipment for signal processing.
These applications benefit from the MOSFET's low on-resistance and fast switching capabilities.