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SIHG47N60EF-GE3
+Lista de MateriaisMOSFET N-CH 600V 47A TO247AC
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FabricanteVishay Siliconix
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Peça do Fabricante #SIHG47N60EF-GE3
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Ficha Técnica SIHG47N60EF-GE3 DataSheet
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Pacote TO-247-3
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Especificações
| Atributo | Valor |
| Package / Case | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain(Id) @ 25°C | 47A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 67mOhm @ 24A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 225 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 4854 pF @ 100 V |
| Power Dissipation (Max) | 379W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247AC |
Visão Geral
Description
The SIHG47N60EF-GE3 is a discrete semiconductor device, specifically an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Vishay Siliconix. It is designed for high-efficiency switching applications and is commonly used in power supply circuits, DC-DC converters, and motor control systems.
Key features of the SIHG47N60EF-GE3 include:
1. Voltage and Current Ratings: It typically supports a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 47A, making it suitable for high-power applications.
2. R_DS(on): It has a low on-resistance (R_DS(on)), which reduces power loss and improves efficiency in switching applications.
3. Packaging: The device is available in a standard TO-220 or TO-247 package, which aids in heat dissipation and is compatible with standard mounting configurations.
4. Temperature Range: It operates over a wide temperature range, ensuring reliability under varying environmental conditions.
5. Applications: It is ideal for use in industrial and consumer electronics requiring robust power management solutions.
Overall, the SIHG47N60EF-GE3 offers a combination of high performance, efficiency, and reliability for various power electronic applications.
Key features of the SIHG47N60EF-GE3 include:
1. Voltage and Current Ratings: It typically supports a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 47A, making it suitable for high-power applications.
2. R_DS(on): It has a low on-resistance (R_DS(on)), which reduces power loss and improves efficiency in switching applications.
3. Packaging: The device is available in a standard TO-220 or TO-247 package, which aids in heat dissipation and is compatible with standard mounting configurations.
4. Temperature Range: It operates over a wide temperature range, ensuring reliability under varying environmental conditions.
5. Applications: It is ideal for use in industrial and consumer electronics requiring robust power management solutions.
Overall, the SIHG47N60EF-GE3 offers a combination of high performance, efficiency, and reliability for various power electronic applications.
Equivalent
The SIHG47N60EF-GE3 is a 600V, 47A N-channel MOSFET manufactured by Vishay. Equivalent products would include MOSFETs with similar voltage and current ratings from other manufacturers, such as:
1. Infineon's IPB60R045C7
2. STMicroelectronics' STW47N60M2
3. ON Semiconductor's NTP60N06
Always verify detailed specifications to ensure compatibility in your specific application.
1. Infineon's IPB60R045C7
2. STMicroelectronics' STW47N60M2
3. ON Semiconductor's NTP60N06
Always verify detailed specifications to ensure compatibility in your specific application.
Features
The SIHG47N60EF-GE3 is a power MOSFET designed for high-efficiency and high-reliability applications. Key features include:
1. Voltage and Current Ratings: It supports a drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 47A, making it suitable for high voltage and high power applications.
2. RDS(on): It offers a low on-resistance, which helps in reducing conduction losses and improving overall efficiency.
3. Package: Typically available in a TO-247 package, providing good thermal performance and ease of mounting.
4. Technology: Built on advanced silicon technology for better performance, including fast switching speeds which are ideal for applications like power supplies and inverters.
5. Temperature Range: It can operate over a wide temperature range, ensuring reliability in various environments.
6. Applications: Commonly used in applications such as switching power supplies, motor drives, and other high-speed switching applications.
These features make it a versatile component for use in industrial and consumer electronics requiring efficient power management.
1. Voltage and Current Ratings: It supports a drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 47A, making it suitable for high voltage and high power applications.
2. RDS(on): It offers a low on-resistance, which helps in reducing conduction losses and improving overall efficiency.
3. Package: Typically available in a TO-247 package, providing good thermal performance and ease of mounting.
4. Technology: Built on advanced silicon technology for better performance, including fast switching speeds which are ideal for applications like power supplies and inverters.
5. Temperature Range: It can operate over a wide temperature range, ensuring reliability in various environments.
6. Applications: Commonly used in applications such as switching power supplies, motor drives, and other high-speed switching applications.
These features make it a versatile component for use in industrial and consumer electronics requiring efficient power management.
Pinout
The SIHG47N60EF-GE3 is a power MOSFET manufactured by Vishay Siliconix. It is a high-voltage N-channel MOSFET with a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of approximately 47A, making it suitable for high-power applications.
This component typically comes in a TO-247 package, which usually has three pins:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here relative to the source pin allows current to flow between the drain and source.
2. Drain (D): This is the main current-carrying terminal. The current flows into the drain from the external circuit when the MOSFET is on.
3. Source (S): This is the terminal through which the current exits the MOSFET.
The SIHG47N60EF-GE3 is used in applications such as power supplies, motor drives, and other systems that require efficient power management.
This component typically comes in a TO-247 package, which usually has three pins:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here relative to the source pin allows current to flow between the drain and source.
2. Drain (D): This is the main current-carrying terminal. The current flows into the drain from the external circuit when the MOSFET is on.
3. Source (S): This is the terminal through which the current exits the MOSFET.
The SIHG47N60EF-GE3 is used in applications such as power supplies, motor drives, and other systems that require efficient power management.
Manufacturer
The SIHG47N60EF-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global company that specializes in the manufacturing of discrete semiconductors and passive electronic components. Founded in 1962, Vishay is one of the largest manufacturers in its field, supplying components that are essential for a wide range of electronic devices and systems. The company's products are used in various industries, including automotive, industrial, computing, consumer electronics, telecommunications, military, aerospace, and medical markets. Vishay's extensive product portfolio includes transistors, diodes, resistors, capacitors, inductors, and sensors, among others. The SIHG47N60EF-GE3 is a type of power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), which is typically used in power management applications to enhance the efficiency and performance of electronic circuits.
Application
The SIHG47N60EF-GE3 is a power MOSFET designed for high-efficiency switching applications. Its application areas include:
1. Power Supplies: Used in switched-mode power supplies (SMPS) for improved efficiency.
2. Motor Drives: Suitable for driving motors in industrial and automotive applications.
3. Inverters: Utilized in solar inverters and uninterruptible power supplies (UPS).
4. Lighting: Applied in LED lighting systems for efficient power conversion.
5. Consumer Electronics: Used in various devices requiring efficient power management.
The device's features like low on-resistance and high-speed switching make it ideal for these applications.
1. Power Supplies: Used in switched-mode power supplies (SMPS) for improved efficiency.
2. Motor Drives: Suitable for driving motors in industrial and automotive applications.
3. Inverters: Utilized in solar inverters and uninterruptible power supplies (UPS).
4. Lighting: Applied in LED lighting systems for efficient power conversion.
5. Consumer Electronics: Used in various devices requiring efficient power management.
The device's features like low on-resistance and high-speed switching make it ideal for these applications.
Package
The SIHG47N60EF-GE3 is a N-channel MOSFET with a TO-247 package type. This package is designed for high-power applications, offering enhanced thermal performance and reliability.
