SIR826DP-T1-GE3

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SIR826DP-T1-GE3

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MOSFET N-CH 80V 60A PPAK SO-8

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Especificações

Atributo Valor
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain(Id) @ 25°C 60A (Tc)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V
Rds On(Max) @ Id Vgs 4.8mOhm @ 20A, 10V
Vgs(th)(Max) @ Id 2.8V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 90 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 2900 pF @ 40 V
Power Dissipation (Max) 6.25W (Ta), 104W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8

Visão Geral

Description

The SIR826DP-T1-GE3 is a dual N-channel MOSFET from Vishay, designed for high-efficiency power applications. Key features include:
- Low On-Resistance (RDS(on)): 2.6 mΩ (max) at VGS = 10 V, reducing conduction losses.
- High Current Handling: Up to 100 A (pulsed) per channel, suitable for demanding loads.
- Optimized for Synchronous Rectification: Ideal for DC-DC converters, VRMs, and motor drives.
- PowerPAK® SO-8 Package: Compact footprint with improved thermal performance.
- Logic-Level Gate Drive: Compatible with 5 V drive signals for easy integration.
Applications include switching power supplies, battery management, and load switches. Its robust design ensures efficiency and reliability in high-current, high-frequency circuits.
For detailed specs, refer to the datasheet.

Equivalent

Equivalent products to the SIR826DP-T1-GE3 (Vishay dual N-channel MOSFET) include:
- SiR826ADP-T1-GE3 (similar specs, lower Rds(on))
- SiR870DP-T1-GE3 (higher current rating)
- IRF6726MPBF (Infineon alternative)
- FDS8960C (Fairchild dual MOSFET)
Check datasheets for exact compatibility in your application.

Application

The SIR826DP-T1-GE3 is a dual N-channel MOSFET used in:
1. Power Management – DC-DC converters, voltage regulation.
2. Automotive Systems – LED drivers, motor control.
3. Industrial Applications – Power supplies, load switches.
4. Consumer Electronics – Battery protection, fast charging.
5. Telecom/Networking – Server power delivery.
Its high efficiency and compact package make it ideal for space-constrained, high-performance designs.

Package

The SIR826DP-T1-GE3 is a dual N-channel MOSFET in a PowerPAK® SO-8 package. This compact surface-mount design offers high efficiency and thermal performance, suitable for power management applications. The package dimensions are standard SO-8 footprint with an exposed pad for improved heat dissipation.

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