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SMMBT5551LT1G
+Lista de MateriaisTRANS NPN 160V 0.6A SOT23-3
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Fabricanteonsemi
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Peça do Fabricante #SMMBT5551LT1G
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Pacote SOT-23-3
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Em Estoque3613
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Especificações
| Atributo | Valor |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| Transistor Type | NPN |
| Current - Collector(Ic)(Max) | 600 mA |
| Voltage - Collector Emitter Breakdown(Max) | 160 V |
| Vce Saturation(Max) @ Ib Ic | 200mV @ 5mA, 50mA |
| Current - Collector Cutoff(Max) | 100nA |
| DC Current Gain(h FE)(Min) @ Ic Vce | 80 @ 10mA, 5V |
| Power - Max | 225 mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Visão Geral
Description
The SMMBT5551LT1G is an NPN bipolar junction transistor (BJT) widely used in electronic circuits for switching and amplification purposes. It is manufactured by ON Semiconductor, a leading provider of semiconductor-based solutions. This transistor is part of the MMBT5551 series, offering a high voltage operation with a maximum collector-emitter voltage (V_CE) of 160V, making it suitable for high-voltage applications.
The SMMBT5551LT1G comes in a compact SOT-23 package, which is ideal for surface-mount technology (SMT) applications, saving space on printed circuit boards (PCBs). It has a maximum collector current (I_C) of 600mA and a power dissipation capacity of 625mW, ensuring efficient performance under various load conditions.
This transistor is commonly used in amplifier circuits, voltage regulation, and signal processing due to its fast switching speed and low noise characteristics. Its reliability and rugged design make it suitable for use in consumer electronics, automotive, and industrial applications.
The SMMBT5551LT1G comes in a compact SOT-23 package, which is ideal for surface-mount technology (SMT) applications, saving space on printed circuit boards (PCBs). It has a maximum collector current (I_C) of 600mA and a power dissipation capacity of 625mW, ensuring efficient performance under various load conditions.
This transistor is commonly used in amplifier circuits, voltage regulation, and signal processing due to its fast switching speed and low noise characteristics. Its reliability and rugged design make it suitable for use in consumer electronics, automotive, and industrial applications.
Equivalent
The SMMBT5551LT1G is a NPN bipolar junction transistor commonly used for general-purpose amplification and switching applications. Equivalent products include:
1. MMBT5551
2. 2N5551
3. PN2222A (with comparable specifications)
4. BC337 (with some variations in specifications)
These equivalents may have slight differences in packaging or specifications, so verify the requirements of your application before substitution.
1. MMBT5551
2. 2N5551
3. PN2222A (with comparable specifications)
4. BC337 (with some variations in specifications)
These equivalents may have slight differences in packaging or specifications, so verify the requirements of your application before substitution.
Features
The SMMBT5551LT1G is a high-voltage NPN bipolar junction transistor commonly used for amplification and switching applications. Key features include:
1. Voltage Rating: It has a collector-emitter voltage (V_CEO) rating of 160V, making it suitable for high-voltage applications.
2. Current Rating: Collector current (I_C) capability is up to 600mA.
3. Power Dissipation: Maximum power dissipation is 625mW, which helps in handling moderate power levels.
4. Package Type: Available in a compact SOT-23 surface-mount package, facilitating easy installation on PCBs with limited space.
5. Gain: Offers a moderate DC current gain (h_FE) typically ranging from 80 to 250, providing effective amplification.
6. Operating Temperature: Functions reliably over a wide temperature range from -55°C to 150°C, suitable for various environmental conditions.
7. Applications: Ideal for use in signal amplification, switching, and as a driving component in circuits requiring high voltage operation.
These features make the SMMBT5551LT1G a versatile component for a broad array of electronic applications.
1. Voltage Rating: It has a collector-emitter voltage (V_CEO) rating of 160V, making it suitable for high-voltage applications.
2. Current Rating: Collector current (I_C) capability is up to 600mA.
3. Power Dissipation: Maximum power dissipation is 625mW, which helps in handling moderate power levels.
4. Package Type: Available in a compact SOT-23 surface-mount package, facilitating easy installation on PCBs with limited space.
5. Gain: Offers a moderate DC current gain (h_FE) typically ranging from 80 to 250, providing effective amplification.
6. Operating Temperature: Functions reliably over a wide temperature range from -55°C to 150°C, suitable for various environmental conditions.
7. Applications: Ideal for use in signal amplification, switching, and as a driving component in circuits requiring high voltage operation.
These features make the SMMBT5551LT1G a versatile component for a broad array of electronic applications.
Pinout
The SMMBT5551LT1G is a NPN bipolar junction transistor (BJT) typically used for high-voltage, high-speed switching applications. It is part of the SOT-23 package family, which is a small-outline transistor package commonly used in surface-mount technology.
Pin Count:
- The SMMBT5551LT1G has 3 pins.
Function of Pins:
1. Pin 1 (Base): This is the control pin for the transistor. A small current input to this pin allows a larger current to flow from the collector to the emitter.
2. Pin 2 (Emitter): This is the output pin through which the current exits. It is typically connected to ground or a lower voltage point in the circuit.
3. Pin 3 (Collector): This pin receives the main current that is controlled by the base current. It is usually connected to the load or the higher voltage point in the circuit.
The transistor is used in applications that require fast switching and high-voltage handling capabilities, such as in signal amplification, voltage regulation, and as a switch in electronic circuits.
Pin Count:
- The SMMBT5551LT1G has 3 pins.
Function of Pins:
1. Pin 1 (Base): This is the control pin for the transistor. A small current input to this pin allows a larger current to flow from the collector to the emitter.
2. Pin 2 (Emitter): This is the output pin through which the current exits. It is typically connected to ground or a lower voltage point in the circuit.
3. Pin 3 (Collector): This pin receives the main current that is controlled by the base current. It is usually connected to the load or the higher voltage point in the circuit.
The transistor is used in applications that require fast switching and high-voltage handling capabilities, such as in signal amplification, voltage regulation, and as a switch in electronic circuits.
Manufacturer
The SMMBT5551LT1G is manufactured by ON Semiconductor, now officially known as onsemi. onsemi is a leading semiconductor company that designs and manufactures a wide range of semiconductor components. Their products are essential for various applications including power management, automotive, industrial, communications, and computing. The company is known for focusing on energy-efficient innovations and has a strong presence in the automotive and industrial sectors, among others.
Application
The SMMBT5551LT1G is a high-voltage NPN bipolar junction transistor (BJT) used in various applications. Common application areas include:
1. Amplifiers: Used in audio, signal, and RF amplifiers due to its ability to handle high voltages.
2. Switching Circuits: Effective in fast switching applications like DC-DC converters and power regulation.
3. Voltage Regulation: Employed in circuits requiring stable voltage, such as power supplies.
4. LED Drivers: Used to drive LEDs in high-voltage applications.
5. General Purpose Switching: Suitable for switching loads in electronic devices.
Its high voltage capability and reliable performance make it versatile for many electronic applications.
1. Amplifiers: Used in audio, signal, and RF amplifiers due to its ability to handle high voltages.
2. Switching Circuits: Effective in fast switching applications like DC-DC converters and power regulation.
3. Voltage Regulation: Employed in circuits requiring stable voltage, such as power supplies.
4. LED Drivers: Used to drive LEDs in high-voltage applications.
5. General Purpose Switching: Suitable for switching loads in electronic devices.
Its high voltage capability and reliable performance make it versatile for many electronic applications.
Package
The SMMBT5551LT1G is packaged in a SOT-23 (Small Outline Transistor) package. This is a surface-mount package commonly used for small signal transistors.
