SMMBTA06LT1G

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SMMBTA06LT1G

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TRANS NPN 80V 0.5A SOT23-3

  • Fabricanteonsemi

  • Peça do Fabricante #SMMBTA06LT1G

  • Pacote SOT-23-3

  • Em Estoque7486

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Especificações

Atributo Valor
Package / Case Tape & Reel (TR),Cut Tape (CT)
Part Status Active
Transistor Type NPN
Current - Collector(Ic)(Max) 500 mA
Voltage - Collector Emitter Breakdown(Max) 80 V
Vce Saturation(Max) @ Ib Ic 250mV @ 10mA, 100mA
Current - Collector Cutoff(Max) 100nA
DC Current Gain(h FE)(Min) @ Ic Vce 100 @ 100mA, 1V
Power - Max 225 mW
Frequency - Transition 100MHz
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount

Visão Geral

Description

The SMMBTA06LT1G is a PNP bipolar junction transistor (BJT) in a SOT-23 package, designed for general-purpose amplification and switching applications. Key features include:
- Low voltage operation (VCEO = -32V, IC = -500mA).
- High current gain (hFE) for efficient signal amplification.
- Compact SMD package, ideal for space-constrained designs.
Common uses include load switching, signal amplification, and driver stages in portable electronics, sensors, and low-power circuits. Its small size and performance make it suitable for consumer electronics, IoT devices, and automotive applications.
For detailed specs, refer to the datasheet from manufacturers like ON Semiconductor.

Equivalent

Equivalent products to the SMMBTA06LT1G (PNP transistor) include:
- BC856BLT1G (ON Semiconductor)
- MMBT5401LT1G (ON Semiconductor)
- 2N2907A (general-purpose PNP)
- BC807-25LT1G (ON Semiconductor)
Check datasheets for exact specs like voltage, current, and package compatibility.

Features

The SMMBTA06LT1G is a PNP bipolar junction transistor (BJT) in a small SOT-23 package. Key features:
- Type: PNP BJT
- Voltage Ratings:
- Collector-Emitter Voltage (VCEO): -32V
- Collector-Base Voltage (VCB): -32V
- Emitter-Base Voltage (VEB): -5V
- Current Ratings:
- Continuous Collector Current (IC): -500mA
- Peak Current (ICM): -1A
- Power Dissipation (PD): 225mW
- Gain (hFE): 100–250 (at IC = -150mA)
- Low Saturation Voltage: VCE(sat) ≈ -0.25V (at IC = -150mA)
- Package: SOT-23 (3-pin)
- Applications: Switching, amplification, and load driving in compact circuits.
Compact, efficient, and suitable for low-power designs.

Pinout

The SMMBTA06LT1G is a PNP bipolar junction transistor (BJT) in a SOT-23-3 package, featuring 3 pins with the following functions:
1. Emitter (E) – Connected to the ground or negative supply.
2. Base (B) – Controls the transistor's switching/amplification.
3. Collector (C) – Connects to the load or positive supply.
Key specs:
- Voltage (VCEO): -40V
- Current (IC): -500mA
- Power dissipation: 225mW
Commonly used in switching, amplification, and signal inversion in compact circuits.

Application

The SMMBTA06LT1G is a general-purpose NPN bipolar transistor in a small SOT-23 package. Its key application areas include:
- Switching circuits (load control, relays, LEDs)
- Amplification (small-signal audio/RF stages)
- Digital logic interfaces (level shifting, buffering)
- Consumer electronics (portable devices, sensors)
- Automotive systems (low-power control modules)
Its compact size, low saturation voltage, and moderate current handling (500mA) make it suitable for space-constrained, low-power designs.

Package

The SMMBTA06LT1G is a PNP bipolar junction transistor (BJT) in a SOT-23 surface-mount package. This compact 3-pin package is widely used for small-signal applications, offering efficient space-saving for PCB designs. It is suitable for general-purpose amplification and switching tasks.

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