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SQ2361AEES-T1_GE3
+Lista de MateriaisMOSFET P-CH 60V 2.8A SSOT23
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FabricanteVishay Siliconix
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Peça do Fabricante #SQ2361AEES-T1_GE3
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Ficha Técnica SQ2361AEES-T1_GE3 DataSheet
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Pacote SOT-23-3
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Especificações
| Atributo | Valor |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101, TrenchFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 2.8A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 170mOhm @ 2.4A, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 15 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 620 pF @ 30 V |
| Power Dissipation (Max) | 2W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TA) |
| Mounting Type | Surface Mount |
Visão Geral
Description
1. Course Content: The course might focus on a specialized topic, possibly within engineering, science, or technology, suggested by the alphanumeric code structure.
2. Structure: It could include lectures, labs, and seminars designed to introduce foundational concepts, tools, and applications relevant to the subject area.
3. Objectives: Likely aims to equip students with fundamental knowledge and skills applicable in academic or practical scenarios.
4. Assessment: Typically, such courses involve assessments through exams, projects, or assignments to evaluate understanding and application of material.
5. Credit and Prerequisites: Often part of a larger program with specific credit value and may have prerequisites or corequisites to ensure students have necessary background knowledge.
For specific details, consulting the course syllabus or academic advisor is recommended.
Equivalent
Features
1. Low Forward Voltage Drop: This feature ensures higher efficiency by minimizing power loss.
2. High Surge Current Capability: It can handle brief high current surges which is beneficial for applications with varying loads.
3. Guard Ring for Stress Protection: Enhances the diode's reliability and longevity by protecting against voltage spikes.
4. Surface Mount Package: It is designed for easy integration into modern circuit boards.
5. Fast Switching: Suitable for high-frequency applications due to its rapid switching capabilities.
6. High Temperature Operation: Can operate efficiently at elevated temperatures, expanding its use across various environments.
These characteristics make the SQ2361AEES-T1_GE3 suitable for power management, voltage regulation, and various electronic applications where efficient diode performance is crucial.
Pinout
The primary functions of the pins in a typical MOSFET like the SQ2361AEES might include:
1. Gate (G): This pin controls the transistor, turning it on or off.
2. Drain (D): Current flows from the drain to the source when the MOSFET is on.
3. Source (S): The current flows out through this pin.
4. Body/Backgate (B): Often internally connected to the source in many package types.
Note that the exact pin configuration can vary, and additional pins may be used for other functions such as heatsinking or additional gates. Always refer to the manufacturer's datasheet for exact pin configuration and specifications.
Manufacturer
Vishay's products are integral to various applications across multiple industries, including automotive, industrial, computing, consumer electronics, telecommunications, military, aerospace, and medical markets. The company focuses on delivering components that enhance performance and reliability, supporting the advancement of technology through innovation and quality manufacturing. Vishay Intertechnology's broad product portfolio and global reach underscore its role as a key player in the electronics components industry.