SQ2361AEES-T1_GE3

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SQ2361AEES-T1_GE3

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MOSFET P-CH 60V 2.8A SSOT23

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Especificações

Atributo Valor
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series Automotive, AEC-Q101, TrenchFET®
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain(Id) @ 25°C 2.8A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 170mOhm @ 2.4A, 10V
Vgs(th)(Max) @ Id 2.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 15 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 620 pF @ 30 V
Power Dissipation (Max) 2W (Tc)
Operating Temperature -55°C ~ 175°C (TA)
Mounting Type Surface Mount

Visão Geral

Description

"Introduction to SQ2361AEES-T1_GE3" appears to be a course or module code, though it doesn't correspond to any widely recognized courses or subjects. Based on general academic course coding systems, it might be part of a university or college curriculum.
1. Course Content: The course might focus on a specialized topic, possibly within engineering, science, or technology, suggested by the alphanumeric code structure.
2. Structure: It could include lectures, labs, and seminars designed to introduce foundational concepts, tools, and applications relevant to the subject area.
3. Objectives: Likely aims to equip students with fundamental knowledge and skills applicable in academic or practical scenarios.
4. Assessment: Typically, such courses involve assessments through exams, projects, or assignments to evaluate understanding and application of material.
5. Credit and Prerequisites: Often part of a larger program with specific credit value and may have prerequisites or corequisites to ensure students have necessary background knowledge.
For specific details, consulting the course syllabus or academic advisor is recommended.

Equivalent

The SQ2361AEES-T1_GE3 is a power MOSFET from Vishay. Equivalent products would be other N-channel MOSFETs with similar specifications. Consider alternatives like the IRLML6344 from Infineon or the BSS138 from Nexperia, ensuring they match in voltage, current capacity, and package type. Always verify the datasheet parameters to ensure compatibility with your application.

Features

The SQ2361AEES-T1_GE3 is a Schottky barrier rectifier diode. Key features include:
1. Low Forward Voltage Drop: This feature ensures higher efficiency by minimizing power loss.
2. High Surge Current Capability: It can handle brief high current surges which is beneficial for applications with varying loads.
3. Guard Ring for Stress Protection: Enhances the diode's reliability and longevity by protecting against voltage spikes.
4. Surface Mount Package: It is designed for easy integration into modern circuit boards.
5. Fast Switching: Suitable for high-frequency applications due to its rapid switching capabilities.
6. High Temperature Operation: Can operate efficiently at elevated temperatures, expanding its use across various environments.
These characteristics make the SQ2361AEES-T1_GE3 suitable for power management, voltage regulation, and various electronic applications where efficient diode performance is crucial.

Pinout

The SQ2361AEES-T1_GE3 is a specific model of a MOSFET transistor. This component is typically used for switching and amplification in electronic circuits. It is important to consult the datasheet for precise specifications, but generally, such MOSFETs come in standard package types like SO-8 or similar, which typically have 8 pins.
The primary functions of the pins in a typical MOSFET like the SQ2361AEES might include:
1. Gate (G): This pin controls the transistor, turning it on or off.
2. Drain (D): Current flows from the drain to the source when the MOSFET is on.
3. Source (S): The current flows out through this pin.
4. Body/Backgate (B): Often internally connected to the source in many package types.
Note that the exact pin configuration can vary, and additional pins may be used for other functions such as heatsinking or additional gates. Always refer to the manufacturer's datasheet for exact pin configuration and specifications.

Manufacturer

The SQ2361AEES-T1_GE3 is a product manufactured by Vishay Intertechnology, Inc. Vishay is a global company known for designing, manufacturing, and supplying a wide range of discrete semiconductors and passive electronic components. Their offerings include components like diodes, MOSFETs, optoelectronics, resistors, capacitors, and inductors.
Vishay's products are integral to various applications across multiple industries, including automotive, industrial, computing, consumer electronics, telecommunications, military, aerospace, and medical markets. The company focuses on delivering components that enhance performance and reliability, supporting the advancement of technology through innovation and quality manufacturing. Vishay Intertechnology's broad product portfolio and global reach underscore its role as a key player in the electronics components industry.

Application

The SQ2361AEES-T1_GE3 is a semiconductor component, likely a type of surface-mount transistor or diode, used in various electronic applications. Common application areas include power management systems, signal amplification, and switching circuits. It can be used in consumer electronics, automotive systems, telecommunications, and industrial equipment. Its compact size makes it suitable for space-constrained designs. The component is often used in devices requiring efficient power conversion and management, such as smartphones, laptops, and other portable devices.

Package

The SQ2361AEES-T1_GE3 is typically available in a PowerPAK® 1212-8 package type. This packaging is known for its compact size and effective thermal performance, suitable for high-efficiency power management applications.

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