SQJ479EP-T1_GE3

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SQJ479EP-T1_GE3

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MOSFET P-CH 80V 32A PPAK SO-8

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Especificações

Atributo Valor
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series Automotive, AEC-Q101, TrenchFET®
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain(Id) @ 25°C 32A (Tc)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V
Rds On(Max) @ Id Vgs 33mOhm @ 10A, 10V
Vgs(th)(Max) @ Id 2.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 150 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 4500 pF @ 25 V
Power Dissipation (Max) 68W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8

Visão Geral

Description

The SQJ479EP-T1_GE3 is a high-performance, surface-mount N-channel MOSFET designed for power management applications. Key features include:
- Low On-Resistance (RDS(on)): Enhances efficiency and reduces power loss.
- High Current Handling: Suitable for demanding loads.
- Fast Switching Speed: Ideal for high-frequency circuits.
- Compact Package (e.g., PowerPAK® SO-8): Saves board space.
Common applications include DC-DC converters, motor control, and load switching in consumer electronics, automotive systems, and industrial equipment.
For detailed specifications, refer to the datasheet from the manufacturer (e.g., Vishay or Infineon).

Equivalent

Equivalent products to the SQJ479EP-T1_GE3 (a P-channel MOSFET by Vishay) include:
- SiA479DJ-T1-GE3 (Similar specs, same package)
- IRLML6402TRPBF (Infineon, comparable ratings)
- FDC5614P (Fairchild, alternative P-MOSFET)
- DMG2305UX (Diodes Inc., similar characteristics)
Check datasheets for exact compatibility in your application.

Features

The SQJ479EP-T1_GE3 is a P-channel MOSFET with the following key features:
- Voltage Rating: -30V (Drain-Source)
- Current Rating: -6.3A (Continuous Drain Current)
- Low On-Resistance (RDS(on)): 47mΩ (max) @ VGS = -10V
- Gate Threshold Voltage (VGS(th)): -1V to -3V
- Fast Switching Speed
- Compact Package: PowerPAK® SO-8 (Optimized for space-saving designs)
- AEC-Q101 Qualified (Suitable for automotive applications)
- Low Power Loss & High Efficiency
Ideal for power management in automotive, industrial, and consumer electronics.

Manufacturer

The SQJ479EP-T1_GE3 is manufactured by ON Semiconductor, now known as onsemi after rebranding in 2021.
onsemi is a global semiconductor company specializing in power management, analog, and sensor technologies. It serves industries like automotive, industrial, and consumer electronics, focusing on energy-efficient solutions. Headquartered in Phoenix, Arizona, onsemi is known for reliable, high-performance components used in applications such as electric vehicles, renewable energy, and IoT.
The SQJ479EP-T1_GE3 is a MOSFET (metal-oxide-semiconductor field-effect transistor), commonly used for power switching and amplification in circuits.

Application

The SQJ479EP-T1_GE3 is a high-performance N-channel MOSFET designed for power management applications. Key application areas include:
- DC-DC Converters: Efficient voltage regulation in power supplies.
- Motor Control: Driving and controlling motors in automotive and industrial systems.
- Load Switching: Power distribution in consumer electronics and computing.
- Battery Management: Protection and charging circuits in portable devices.
- LED Lighting: Driver circuits for high-efficiency lighting solutions.
Its low on-resistance and fast switching make it ideal for energy-efficient, high-frequency applications.

Package

The SQJ479EP-T1_GE3 is a Power MOSFET in a PowerPAK® SO-8 package. This compact surface-mount design offers efficient thermal performance and is commonly used in power management applications. The "T1" suffix indicates tape-and-reel packaging for automated assembly. The "GE3" denotes specific performance or revision characteristics.

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