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STGW40H65DFB
+Lista de MateriaisIGBT 650V 80A 283W TO-247
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FabricanteSTMicroeletrônica
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Peça do Fabricante #STGW40H65DFB
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Ficha Técnica STGW40H65DFB DataSheet
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Pacote TO-247-3
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Especificações
| Atributo | Valor |
| Supplier | STMicroelectronics |
| Package | Tube |
| ProductStatus | Active |
| IGBTType | Trench Field Stop |
| Voltage-CollectorEmitterBreakdown(Max) | 650 V |
| Current-Collector(Ic)(Max) | 80 A |
| Current-CollectorPulsed(Icm) | 160 A |
| Vce(on)(Max)@VgeIc | 2V @ 15V, 40A |
| Power-Max | 283 W |
| SwitchingEnergy | 498µJ (on), 363µJ (off) |
| InputType | Standard |
| GateCharge | 210 nC |
| Td(on/off)@25°C | 40ns/142ns |
| TestCondition | 400V, 40A, 5Ohm, 15V |
| ReverseRecoveryTime(trr) | 62 ns |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| Package/Case | TO-247-3 |
Visão Geral
Description
The STGW40H65DFB is a power transistor component, specifically an IGBT (Insulated Gate Bipolar Transistor) developed by STMicroelectronics. It is designed for high-efficiency switching applications, combining the advantages of both MOSFETs and bipolar transistors. The STGW40H65DFB is characterized by its 650V breakdown voltage and a current rating of 40A, making it suitable for a variety of industrial applications, including motor drives, inverters, and power supplies.
One of its key features is its low on-state voltage drop, which enhances efficiency by reducing power loss during operation. Additionally, it features an optimized trench-gate field-stop design, contributing to its fast switching capabilities and reliable performance under demanding conditions. The device also includes a built-in diode for reverse conduction, adding to its versatility.
Encased in a TO-247 package, the STGW40H65DFB offers improved thermal performance, which is crucial for maintaining stability and extending the life of the component in high-power environments. Its robust design and high efficiency make it a popular choice in power electronics applications.
One of its key features is its low on-state voltage drop, which enhances efficiency by reducing power loss during operation. Additionally, it features an optimized trench-gate field-stop design, contributing to its fast switching capabilities and reliable performance under demanding conditions. The device also includes a built-in diode for reverse conduction, adding to its versatility.
Encased in a TO-247 package, the STGW40H65DFB offers improved thermal performance, which is crucial for maintaining stability and extending the life of the component in high-power environments. Its robust design and high efficiency make it a popular choice in power electronics applications.
Equivalent
The STGW40H65DFB is a 650V, 40A Insulated Gate Bipolar Transistor (IGBT) with a fast recovery diode. Equivalent products include the Infineon IKW40N65H5, ON Semiconductor FGH40T65UQDF, and Fuji Electric FGW40N65C3. These alternatives have similar voltage and current ratings, suitable for high-speed switching applications, but always verify specifications and pin configurations for compatibility.
Features
The STGW40H65DFB is a silicon-based IGBT (Insulated Gate Bipolar Transistor) specifically designed for high-efficiency, high-speed switching applications. Key features include:
1. Collector-Emitter Voltage: It supports a maximum collector-emitter voltage of 650V, suitable for medium to high-power applications.
2. Current Rating: Can handle a continuous collector current of up to 40A, making it suitable for demanding applications.
3. Low Saturation Voltage: Offers a low V_CE(sat), which reduces conduction losses and improves overall efficiency.
4. Soft and Fast Recovery Diode: The integrated diode ensures high-speed switching and soft recovery characteristics, minimizing voltage spikes and electromagnetic interference.
5. Switching Speed: Provides fast switching capabilities, enhancing performance in high-frequency applications.
6. Ruggedness: Designed to withstand high transient currents and support robust operation in demanding environments.
7. Temperature Range: It operates efficiently over a broad temperature range, which ensures reliability in various applications.
These features make the STGW40H65DFB suitable for use in industrial drives, power converters, and other applications requiring efficient power management.
1. Collector-Emitter Voltage: It supports a maximum collector-emitter voltage of 650V, suitable for medium to high-power applications.
2. Current Rating: Can handle a continuous collector current of up to 40A, making it suitable for demanding applications.
3. Low Saturation Voltage: Offers a low V_CE(sat), which reduces conduction losses and improves overall efficiency.
4. Soft and Fast Recovery Diode: The integrated diode ensures high-speed switching and soft recovery characteristics, minimizing voltage spikes and electromagnetic interference.
5. Switching Speed: Provides fast switching capabilities, enhancing performance in high-frequency applications.
6. Ruggedness: Designed to withstand high transient currents and support robust operation in demanding environments.
7. Temperature Range: It operates efficiently over a broad temperature range, which ensures reliability in various applications.
These features make the STGW40H65DFB suitable for use in industrial drives, power converters, and other applications requiring efficient power management.
Pinout
The STGW40H65DFB is an IGBT (Insulated Gate Bipolar Transistor) from STMicroelectronics. Specifically, it is a 650V, 40A IGBT intended for high-efficiency applications.
Regarding its pin count and function:
- The device typically comes in a TO-247 package, which generally has three pins.
- The pin functions are as follows:
1. Collector (C): The terminal through which the conventional current enters the transistor.
2. Emitter (E): The terminal through which the conventional current leaves the transistor.
3. Gate (G): The control terminal that modulates the flow of current between the collector and emitter.
These IGBTs are commonly used in applications like power supplies, motor drives, and other high-current scenarios where switching efficiency and thermal performance are critical.
Regarding its pin count and function:
- The device typically comes in a TO-247 package, which generally has three pins.
- The pin functions are as follows:
1. Collector (C): The terminal through which the conventional current enters the transistor.
2. Emitter (E): The terminal through which the conventional current leaves the transistor.
3. Gate (G): The control terminal that modulates the flow of current between the collector and emitter.
These IGBTs are commonly used in applications like power supplies, motor drives, and other high-current scenarios where switching efficiency and thermal performance are critical.
Manufacturer
The STGW40H65DFB is manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, develops, manufactures, and markets a wide range of semiconductor products. The company is one of the leading manufacturers in the semiconductor industry, providing solutions for various applications such as automotive, industrial, personal electronics, and communications equipment. STMicroelectronics is headquartered in Geneva, Switzerland, and operates globally with multiple research and development centers and production facilities. The company focuses on innovation and technology to offer products that enhance energy efficiency and support digital transformation.
Application
The STGW40H65DFB is a high-speed IGBT (Insulated Gate Bipolar Transistor) designed for various applications. Its primary application areas include:
1. Motor Drives: Used in industrial, commercial, and home appliances for efficient motor control.
2. Power Inverters: Suitable for solar inverters and uninterruptible power supplies (UPS).
3. Welding Equipment: Provides efficient power management in welding machines.
4. Switching Power Supplies: Utilized in high-frequency power supply circuits.
5. Lighting: Employed in electronic ballast for lighting systems.
These applications benefit from the device's high-speed switching, low power loss, and robust performance.
1. Motor Drives: Used in industrial, commercial, and home appliances for efficient motor control.
2. Power Inverters: Suitable for solar inverters and uninterruptible power supplies (UPS).
3. Welding Equipment: Provides efficient power management in welding machines.
4. Switching Power Supplies: Utilized in high-frequency power supply circuits.
5. Lighting: Employed in electronic ballast for lighting systems.
These applications benefit from the device's high-speed switching, low power loss, and robust performance.
Package
The STGW40H65DFB is an IGBT (Insulated Gate Bipolar Transistor) typically housed in a TO-247 package. This package type is known for its suitability in high-power applications, providing efficient thermal management and reliable performance, often used in power electronics and industrial systems.
