Imagens apenas para referência
STGWA25H120DF2
+Lista de MateriaisIGBT HB 1200V 25A HS TO247-3
-
FabricanteSTMicroeletrônica
-
Peça do Fabricante #STGWA25H120DF2
-
Ficha Técnica STGWA25H120DF2 DataSheet
-
Pacote TO-247
-
Em Estoque3856
365 Garantia de Qualidade em 1 dia
7*24 Garantia de serviço em 24 horas
90-Garantia de pós-venda em 1 dia
Garantia de Produto Genuíno
Especificações
| Atributo | Valor |
| Package / Case | Tube |
| Part Status | Active |
| IGBT Type | Trench Field Stop |
| Voltage - Collector Emitter Breakdown(Max) | 1200 V |
| Current - Collector(Ic)(Max) | 50 A |
| Current - Collector Pulsed(Icm) | 100 A |
| Vce(on)(Max) @ Vge Ic | 2.6V @ 15V, 25A |
| Power - Max | 375 W |
| Switching Energy | 600µJ (on), 700µJ (off) |
| Input Type | Standard |
| Gate Charge | 100 nC |
| Td(on / off) @ 25°C | 29ns/130ns |
| Test Condition | 600V, 25A, 10Ohm, 15V |
| Reverse Recovery Time (trr) | 303 ns |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
Visão Geral
Description
- Low conduction losses due to SiC technology.
- High switching speed, reducing energy loss in high-frequency circuits.
- Robust thermal performance with a low RDS(on) (typ. 120mΩ).
- Integrated fast-recovery body diode for improved reliability.
Applications include EV chargers, solar inverters, industrial power supplies, and motor drives. Its TO-247 package ensures easy integration into high-power systems.
This MOSFET is ideal for designs requiring high voltage, efficiency, and thermal stability.
Equivalent
- Infineon: IGW25N120H3
- Fuji Electric: 2MBI200U2A-120
- Mitsubishi: CM200DY-24A
These alternatives offer similar voltage, current ratings, and package compatibility. Always verify datasheets for exact specifications.
Features
- Low VCE(sat): Reduces conduction losses for better efficiency.
- Fast switching: Optimized for high-frequency operation.
- High current capability: 25A continuous current (up to 50A pulsed).
- Temperature resilience: Operates up to 175°C (Tj max).
- Integrated diode: Includes a freewheeling diode for simplified design.
- Low EMI: Improved switching performance minimizes noise.
- Isolated baseplate: Enhances thermal management and safety.
Ideal for motor drives, UPS, and industrial inverters. Compact, robust, and energy-efficient.
Pinout
- Pin Count: Typically 7 pins (varies by package; common for TO-247-like modules).
- Functions:
- Collector (C1, C2) – High-voltage input/output.
- Emitter (E1, E2) – Ground/return path.
- Gate (G1, G2) – Control signal input for switching.
- Temperature sensor (optional pin, if present) – Monitors module temperature.
Designed for high-power switching (e.g., inverters, motor drives), it integrates anti-parallel diodes for freewheeling.
Manufacturer
STMicroelectronics specializes in designing and producing a wide range of semiconductor products, including power devices, microcontrollers, sensors, and integrated circuits for automotive, industrial, and consumer electronics. The company is known for its innovation in energy-efficient and high-performance solutions.
The STGWA25H120DF2 is a 1200V, 25A IGBT (Insulated Gate Bipolar Transistor) with a diode, commonly used in power conversion applications like motor drives and inverters.
Application
1. Power Electronics – High-efficiency converters, inverters, and PFC circuits.
2. Renewable Energy – Solar inverters and wind power systems.
3. EV Charging – Fast chargers and onboard chargers.
4. Industrial Drives – Motor control in automation and robotics.
5. UPS & SMPS – High-frequency, high-power supplies.
Its SiC technology enables low switching losses, high-temperature operation, and compact designs.
