STW48N60DM2

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STW48N60DM2

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MOSFET N-CH 600V 40A TO247

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Especificações

Atributo Valor
Series MDmesh™ DM2
PartStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 40A (Tc)
DriveVoltage(MaxRdsOn,MinRdsOn) 10V
RdsOn(Max)@Id,Vgs 79mOhm @ 20A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 70 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 3250 pF @ 100 V
PowerDissipation(Max) 300W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247-3
Package/Case TO-247-3
BaseProductNumber STW48

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Description

The STW48N60DM2 is a N-channel power MOSFET designed for high-efficiency applications, particularly in power supply and motor control circuits. With a voltage rating of 600V and a continuous current rating of 48A, it is well-suited for demanding environments. The device features a low on-resistance (Rds(on)) of around 0.22 ohms, which minimizes power losses during operation, enhancing overall efficiency.
It also has a fast switching speed, making it suitable for high-frequency applications. The STW48N60DM2 is housed in a TO-220 package, facilitating effective thermal management, and is designed to withstand high temperatures, ensuring reliability in various conditions.
This MOSFET is commonly used in applications like switch-mode power supplies (SMPS), inverters, and other industrial equipment where effective switching and thermal performance are crucial. Its robust specifications make it a preferred choice for engineers looking to optimize the performance and efficiency of their designs.

Equivalent

The STW48N60DM2 is a N-channel MOSFET from STMicroelectronics with a 600V voltage rating and 48A current rating. Equivalent products include the IRF840, IRF960, and FQP50N60, among others. Ensure to verify specifications like R_DS(on), gate threshold voltage, and package type for compatibility in your application. Always consult the datasheets for detailed comparisons.

Features

The STW48N60DM2 is a N-channel MOSFET designed for high-efficiency switching applications. Key features include:
1. Voltage Rating: With a maximum drain-source voltage (V_DS) of 600V, it is suitable for high-voltage applications.
2. Current Rating: It can handle a continuous drain current (I_D) of up to 48A at a 25°C case temperature, providing robust performance.
3. R_DS(on): The on-resistance is low, typically around 0.28 ohms at V_GS = 10V, which enhances efficiency by reducing power loss during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2 to 4V, allowing for efficient drive from standard logic levels.
5. Fast Switching: Designed for quick switching speeds, it minimizes switching losses, making it ideal for power supplies and converters.
6. Package: Available in a TO-247 package, ensuring effective thermal management with a good heat dissipation ability.
Overall, the STW48N60DM2 is well-suited for power electronics in industrial and automotive applications.

Pinout

The STW48N60DM2 is a N-channel MOSFET manufactured by STMicroelectronics. It features a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G) - This pin controls the MOSFET and is used to turn it on or off by applying a voltage.
2. Drain (D) - This pin is where the load is connected. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S) - This pin is connected to the ground or the negative side of the circuit. It completes the circuit for current flow.
The STW48N60DM2 is designed for high voltage applications, with a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 48A, making it suitable for various power conversion applications.

Manufacturer

The STW48N60DM2 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics designs and produces a wide range of semiconductor products, including integrated circuits, discrete devices, and sensors. The company serves various markets, such as automotive, industrial, consumer electronics, and communication.
Founded in 1987 through a merger of Italian and French companies, STMicroelectronics operates in numerous countries and is known for its innovation in the semiconductor industry. The STW48N60DM2 is a power MOSFET (metal-oxide-semiconductor field-effect transistor) designed for high-efficiency power management applications. The device is characterized by its high voltage rating and low on-resistance, making it suitable for use in power supplies, motor drives, and other applications requiring efficient switching. Overall, STMicroelectronics is recognized for its commitment to technological advancement and sustainability in the semiconductor sector.

Application

The STW48N60DM2 is a high-voltage N-channel MOSFET designed for various applications, including:
1. Switch Mode Power Supplies (SMPS) - Efficient switching in power converters.
2. Motor Drives - Control of brushless DC and stepper motors.
3. Power Inverters - Used in renewable energy systems like solar inverters.
4. Lighting Control - For LED drivers and dimmers.
5. Audio Amplifiers - For high-efficiency amplification.
6. Industrial Automation - In control systems and robotics.
Its high breakdown voltage and low on-resistance make it suitable for demanding applications requiring efficient power management.

Package

The STW48N60DM2 is packaged in a TO-247 format. This package type is commonly used for high-power applications due to its robust construction and efficient heat dissipation capabilities.

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