TC58BVG0S3HBAI4

Imagens apenas para referência

TC58BVG0S3HBAI4

+Lista de Materiais

IC FLASH 1GBIT PARALLEL 63TFBGA

  • FabricanteKioxia America, Inc.

  • Peça do Fabricante #TC58BVG0S3HBAI4

  • Pacote TFBGA-63

  • Em Estoque4616

365 Garantia de Qualidade em 1 dia

7*24 Garantia de serviço em 24 horas

90-Garantia de pós-venda em 1 dia

Garantia de Produto Genuíno

Especificações

Atributo Valor
Package / Case Tray
Series Benand™
Part Status Active
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND (SLC)
Memory Size 1Gb (128M x 8)
Memory Interface Parallel
Write Cycle Time - Word Page 25ns
Access Time 25 ns
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount

Visão Geral

Description

The TC58BVG0S3HBAI4 is a NAND flash memory chip produced by Toshiba, typically used for data storage in electronic devices such as smartphones, tablets, and other portable electronics. This particular model is part of Toshiba's SLC (Single-Level Cell) NAND lineup, known for its reliability and durability, making it suitable for applications requiring frequent data writes.
Key features of the TC58BVG0S3HBAI4 include its high-speed read and write capabilities, low power consumption, and compact size, which makes it ideal for embedded systems with limited space. The SLC architecture allows each cell to store one bit of data, offering faster performance and greater endurance compared to MLC (Multi-Level Cell) or TLC (Triple-Level Cell) technologies.
The chip supports standard NAND flash command sets and interfaces, enabling seamless integration with a variety of host systems. It's commonly used in industrial, automotive, and consumer applications where robust and reliable storage solutions are critical. Overall, the TC58BVG0S3HBAI4 provides a balance of performance, reliability, and efficiency for demanding storage applications.

Equivalent

The TC58BVG0S3HBAI4 is a NAND flash memory chip. Equivalent products could include NAND flash chips from other manufacturers with similar specifications, such as:
1. Samsung K9F1G08U0C
2. Micron MT29F1G08ABADAWP
3. Hynix HY27UF081G2M
4. Spansion S34ML01G100TFI000
These products are generally characterized by similar capacities, voltage requirements, and physical package types. However, compatibility should be verified based on specific application requirements.

Features

The TC58BVG0S3HBAI4 is a NAND Flash memory chip produced by Toshiba. It is widely used in various electronic devices for data storage purposes. Here are some of its key features:
1. Type: NAND Flash Memory.
2. Density: Typically offers a storage capacity of 1 gigabit (128 megabytes).
3. Memory Organization: Supports a page size of 2,112 bytes (2,048 bytes for data and 64 bytes for spare).
4. Voltage: Operates at a standard voltage of 3.3V.
5. Interface: Uses a parallel interface, common in NAND flash memory for fast data transfer.
6. Performance: Capable of fast read and write operations suitable for applications requiring efficient data handling.
7. Endurance: Designed to handle a high number of program/erase cycles, contributing to its longevity.
8. Packaging: Typically comes in a TSOP (Thin Small Outline Package) for efficient board space usage.
9. Applications: Commonly used in consumer electronics, solid-state drives, and various embedded systems for reliable data storage solutions.
These features make the TC58BVG0S3HBAI4 suitable for applications where compact and reliable memory solutions are essential.

Pinout

The TC58BVG0S3HBAI4 is a NAND flash memory chip manufactured by Toshiba (now Kioxia). It typically comes in a TSOP (Thin Small-Outline Package) with 48 pins. The primary function of this chip is to store data in a non-volatile manner, meaning it retains data even when the power is turned off. It is commonly used in various applications such as solid-state drives, memory cards, and embedded systems.
Key features of the TC58BVG0S3HBAI4 include a large storage capacity and the ability to perform write, read, and erase operations, making it suitable for high-density storage solutions. The device operates through a series of control commands sent via specific pins to perform its functions. These pins include address, data, and control signal lines necessary for interfacing with microcontrollers or other logic devices.
The specific pin functions include power supply pins, ground pins, chip enable, write enable, read enable, and input/output pins for data transfer. For precise details on pin assignments and functions, consulting the manufacturer's datasheet is recommended.

Manufacturer

The TC58BVG0S3HBAI4 is manufactured by Kioxia Corporation. Kioxia is a Japanese company that specializes in the production of flash memory and solid-state storage solutions. Originally a part of Toshiba, Kioxia became an independent entity in 2019, when Toshiba Memory Corporation rebranded as Kioxia. The company is a leader in the development and manufacturing of NAND flash memory, which is widely used in various electronic devices such as smartphones, computers, and servers. Kioxia continues to innovate in the storage technology industry, offering a range of products that cater to both consumer and enterprise markets.

Application

The TC58BVG0S3HBAI4 is a NAND Flash memory chip used in various applications requiring non-volatile storage. It is commonly found in consumer electronics like smartphones, tablets, and digital cameras due to its compact size and reliability. Additionally, it is used in industrial devices for data logging, firmware storage, and system backups. The chip is also suitable for use in automotive systems for infotainment and navigation data storage. Its versatility makes it a good fit for embedded systems and IoT devices that require efficient and durable data storage solutions.

Package

The TC58BVG0S3HBAI4 is a NAND flash memory chip from Toshiba, housed in a TSOP (Thin Small Outline Package) Type I. TSOP is a compact, rectangular packaging style commonly used for memory chips.

Produtos relacionados a TC58BVG0S3HBAI4