Imagens apenas para referência
TC58NVG2S0HTAI0
+Lista de MateriaisIC FLASH 4GBIT PARALLEL 48TSOP I
-
FabricanteKioxia America, Inc.
-
Peça do Fabricante #TC58NVG2S0HTAI0
-
Em Estoque8759
365 Garantia de Qualidade em 1 dia
7*24 Garantia de serviço em 24 horas
90-Garantia de pós-venda em 1 dia
Garantia de Produto Genuíno
Especificações
| Atributo | Valor |
| Part Status | Active |
| Digi Key Programmable | Not Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND (SLC) |
| Memory Size | 4Gbit |
| Memory Organization | 512M x 8 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 25ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 48-TFSOP (0.724", 18.40mm Width) |
| Supplier Device Package | 48-TSOP I |
| Base Product Number | TC58NVG2 |
| Access Time | 25 ns |
Visão Geral
Description
Key specifications include a density of 128GB, advanced error correction capabilities, and high-speed data transfer rates. The TC58NVG2S0HTAI0 supports the latest interface standards, ensuring compatibility with various host systems. Its reliability and endurance make it suitable for applications requiring frequent read/write cycles.
The integration of this NAND flash memory enables manufacturers to enhance device performance, increase storage capacity, and improve energy efficiency, catering to the growing demand for high-performance storage solutions in consumer electronics.
Equivalent
Features
1. Capacity: Typically offers a storage capacity of 128GB to 1TB, making it suitable for various devices.
2. Interface: Utilizes a high-speed interface, often employing ONFI (Open NAND Flash Interface) standards for improved data transfer rates.
3. Speed: Delivers fast read/write speeds, enhancing performance in consumer electronics, SSDs, and enterprise applications.
4. Endurance: Designed with high endurance levels to withstand numerous write cycles, ensuring longevity and reliability.
5. Power Efficiency: Optimized for lower power consumption, making it ideal for mobile devices and battery-operated applications.
6. Multi-Level Cell (MLC): Utilizes advanced MLC technology for efficient data storage, improving overall storage density.
Overall, the TC58NVG2S0HTAI0 is well-suited for applications requiring robust, high-capacity, and efficient NAND flash memory solutions.
Pinout
1. Data I/O Pins: Used for data transfer to and from the memory (D0-D7).
2. Command Input Pins: For sending commands (e.g., CE#, RE#, WE#).
3. Address Input Pins: For selecting the memory address (A0-A10).
4. Chip Enable: To enable or disable the chip (CE#).
5. Write Protect: Protects memory from accidental writes (WP#).
6. Ready/Busy: Indicates the device's status (R/B#).
7. Power Supply: Pins for VCC and Ground (VCC, GND).
This device is commonly used in various applications requiring non-volatile data storage, such as smartphones and embedded systems.
Manufacturer
In terms of semiconductors, Toshiba is recognized for its expertise in NAND flash memory and solid-state drives (SSDs), which are essential components for data storage in various applications, from consumer electronics to enterprise solutions. The TC58NVG2S0HTAI0 is a type of NAND flash memory device, showcasing Toshiba's innovation in memory technology. The company not only focuses on high-performance products but also emphasizes sustainability and energy efficiency in its manufacturing processes. Overall, Toshiba's long-standing history and commitment to technological advancement make it a significant player in the global electronics market.