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THGJFJT2T85BAT0
+Lista de MateriaisIC FLASH 4TBIT UFS 153BGA
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FabricanteKioxia America, Inc.
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Peça do Fabricante #THGJFJT2T85BAT0
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Ficha Técnica THGJFJT2T85BAT0 DataSheet
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Especificações
| Atributo | Valor |
| Part Status | Active |
| Base Product Number | THGJFJT2T85 |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND |
| Memory Size | 4Tbit |
| Memory Organization | 512G x 8 |
| Memory Interface | UFS 4.0 |
| Clock Frequency | 2.32 GHz |
| Voltage - Supply | 2.4V ~ 2.7V |
| Operating Temperature | -25°C ~ 85°C |
| Mounting Type | Surface Mount |
| Package | 153-BGA |
| Supplier Device Package | 153-BGA (11x13) |
| Packaging | Tray |
Visão Geral
Description
Equivalent
1. Samsung's V-NAND series.
2. Micron's 3D NAND chips.
3. Western Digital's BiCS 3D NAND.
4. SK Hynix's 3D NAND products.
These equivalents vary in specifications like performance and capacity, so it's essential to compare specific models for exact matches.
Pinout
The specific pin count and function details are dependent on the exact model and package type. However, BGA packages for NAND flash memory such as this typically have a pin count ranging from around 100 to 200 pins, which are used for various functions including power supply, ground, data input/output, command input, address input, and control signals. For accurate pin count and function, refer to the datasheet or technical specifications provided by Toshiba for the THGJFJT2T85BAT0 model.