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ZXM61P03FTA
+Lista de MateriaisMOSFET P-CH 30V 1.1A SOT23-3
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FabricanteDiodes Incorporated
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Peça do Fabricante #ZXM61P03FTA
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Ficha Técnica ZXM61P03FTA DataSheet
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Pacote SOT-23-3
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Especificações
| Atributo | Valor |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 1.1A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 350mOhm @ 600mA, 10V |
| Vgs(th)(Max) @ Id | 1V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 4.8 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 140 pF @ 25 V |
| Power Dissipation (Max) | 625mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 |
Visão Geral
Description
Key features of the ZXM61P03FTA include a low on-resistance, which enhances its efficiency by minimizing power loss during operation. It also typically offers high-speed switching capabilities, making it suitable for applications that require quick transitions. This MOSFET is commonly used in applications like power management, load switches, and low-voltage drive circuits due to its compact SOT-23 package, which offers ease of integration into various circuit boards. Additionally, its reliability and performance make it a popular choice for designers looking for efficient and effective P-channel MOSFET solutions.
Equivalent
1. IRF9540N by International Rectifier.
2. FQP27P06 by ON Semiconductor.
3. SI2323DS by Vishay.
4. PMV48XP by Nexperia.
When considering equivalents, verify parameters such as voltage, current ratings, and package type to ensure compatibility with your application.
Features
1. Low On-Resistance: It offers low R_DS(on), which ensures efficient power usage and minimal heat generation during operation.
2. Small Footprint: Available in a compact SOT-23 package, making it suitable for space-constrained designs.
3. Fast Switching: The MOSFET exhibits rapid switching characteristics, enhancing performance in high-speed applications.
4. Enhancement Mode: Operates as an enhancement-mode device, meaning it requires voltage to turn on.
5. Voltage and Current Ratings: Typically supports a drain-source voltage (V_DS) of around 30V and can manage continuous drain current (I_D) of approximately 2.5A, depending on the specific variant and conditions.
6. Thermal Performance: Designed to handle thermal stress effectively, contributing to reliability in various environments.
7. Applications: Commonly used in load switching, power management, and other applications requiring efficient power control.
These features make the ZXM61P03FTA a versatile component in the field of electronics, particularly for low-to-medium power applications.
Pinout
1. Gate (G) - This pin controls the MOSFET's on/off state. Applying a voltage to the gate allows current to flow between the source and drain.
2. Source (S) - This pin is the source of charge carriers (holes in the case of a P-channel MOSFET). It is usually connected to a lower voltage or ground.
3. Drain (D) - This pin is where the current exits the MOSFET. It is connected to the load that is being controlled.
The primary function of the ZXM61P03FTA is to switch electronic signals or power within circuits, acting as an electronic switch. As a P-channel MOSFET, it is typically used in high-side switching applications, where the load is connected between the drain and a lower voltage than the source.
Manufacturer
Application
1. Battery Management: Used in battery protection circuits and charging systems due to its low on-resistance and efficient power handling.
2. Load Switching: Suitable for high-side and low-side load switching in consumer electronics and industrial equipment.
3. DC-DC Converters: Facilitates efficient voltage regulation in power supply circuits.
4. Motor Control: Utilized in controlling small motors and actuators in devices and automotive systems.
5. Power Distribution: Integrated in power rail distribution for minimizing power loss and heat dissipation.
These characteristics make it versatile for various applications requiring compact, efficient power control.