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ZXMP10A18KTC
+Lista de MateriaisMOSFET P-CH 100V 3.8A TO252-3
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FabricanteDiodes Incorporated
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Peça do Fabricante #ZXMP10A18KTC
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Ficha Técnica ZXMP10A18KTC DataSheet
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Pacote TO-252-3
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Especificações
| Atributo | Valor |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 3.8A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 6V, 10V |
| RdsOn(Max)@IdVgs | 150mOhm @ 2.8A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 26.9 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1055 pF @ 50 V |
| PowerDissipation(Max) | 2.17W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | TO-252-3 |
Visão Geral
Description
- Low On-Resistance (RDS(on)): Typically 28mΩ at VGS = -10V, ensuring efficient power handling.
- High Current Capacity: Supports up to 10A continuous drain current.
- Compact Package: TO-252 (DPAK) for space-constrained designs.
- Fast Switching: Suitable for DC-DC converters, load switches, and battery management.
- Low Gate Charge: Enhances efficiency in high-frequency applications.
Common uses include power distribution, motor control, and portable electronics. Its robust design and thermal performance make it ideal for demanding environments.
For detailed specs, refer to the datasheet.
Equivalent
- ZXMP10A18KTC variants (same series)
- ZXMP6A18KTC (lower current rating)
- ZXMP12A18KTC (higher current rating)
- Infineon BTS50010-1TAD (similar specs)
- STMicroelectronics VND5E160AJ-E (comparable MOSFET driver)
Check datasheets for exact compatibility.
Pinout
Key Functions:
- Dual N-Channel MOSFET (2x 30V, 10A) in a compact 3.3mm x 3.3mm DFN package.
- Low On-Resistance: Typically 18mΩ per channel.
- Logic-Level Gate Drive (compatible with 2.5V–5V signals).
- Applications: Power management, load switching, DC-DC converters, and motor control.
Pinout Highlights:
- Pins 1–8: Gate, Drain, and Source connections for both MOSFETs (refer to datasheet for exact mapping).
- Exposed thermal pad (Pin 9–16): Enhances heat dissipation.
Concise Summary: 16-pin dual MOSFET for efficient power switching in space-constrained designs.
Manufacturer
ZTE specializes in R&D, production, and sales of telecom hardware, software, and services, including 5G, optical transmission, and wireless solutions. It is one of the world's largest telecom vendors, competing with Huawei, Ericsson, and Nokia.
Founded in 1985 and headquartered in Shenzhen, China, ZTE serves global carriers, enterprises, and consumers. The ZXMP10A18KTC is part of its optical transport product line, designed for high-speed data transmission in telecom networks.
ZTE is publicly traded (SZSE: 000063, SEHK: 0763) and operates in over 160 countries. Despite facing U.S. sanctions in 2018 (later eased), it remains a key player in global telecom infrastructure.
Application
1. Wireless Communication: Enhances signal strength in base stations and RF systems.
2. 5G Infrastructure: Supports high-frequency bands for 5G networks.
3. Satellite Communication: Boosts signals in satellite ground stations.
4. Radar Systems: Used in military and civilian radar applications.
5. Test Equipment: Provides amplification in RF testing and measurement devices.
Its compact design and efficiency make it suitable for advanced telecom and aerospace applications.
