AUIRS2181STR vs AUIRS20162STR

Esta comparação detalhada entre AUIRS2181STR e AUIRS20162STR fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

AUIRS2181STR

Tecnologias Infineon

Lifecycle: Active
Stock: 5680 PCS
Package: SOIC-8
Series: PMIC - Gate Drivers

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Part B

AUIRS20162STR

Tecnologias Infineon

Lifecycle: Active
Stock: 4689 PCS
Package: SOIC-8
Series: PMIC - Gate Drivers

+Lista de Materiais RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	AUIRS2181STR	AUIRS20162STR
Series	-	Automotive, AEC-Q100
Part Status	Active	Obsolete
Driven Configuration	Half-Bridge	High-Side
Channel Type	Independent	Single
Number of Drivers	2	1
Gate Type	IGBT, N-Channel MOSFET	N-Channel MOSFET
Voltage - Supply	10V ~ 20V	4.4V ~ 20V
Current - Peak Output(Source Sink)	1.9A, 2.3A	250mA, 250mA
Input Type	Inverting	Non-Inverting
High Side Voltage - Max(Bootstrap)	600 V	150 V
Rise / Fall Time(Typ)	15ns, 15ns	200ns, 200ns
Operating Temperature	-40°C ~ 150°C (TJ)	-55°C ~ 155°C (TJ)
Mounting Type	Surface Mount	Surface Mount
Logic Voltage - VILVIH	0.8V, 2.5V	-

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