CSD18511Q5A vs CSD18510Q5B

Esta comparação detalhada entre CSD18511Q5A e CSD18510Q5B fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Need help validating a replacement?

Send your BOM and application constraints for technical and sourcing review.

RFQ Contact technical support

Full specification comparison

Use manufacturer datasheets as the final authority.

Specification CSD18511Q5A CSD18510Q5B
Series NexFET™ NexFET™
Part Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain(Id) @ 25°C - 300A (Tc)
Drive Voltage(Max Rds On Min Rds On) - 4.5V, 10V
Rds On(Max) @ Id Vgs - 0.96mOhm @ 32A, 10V
Vgs(th)(Max) @ Id - 2.3V @ 250µA
Gate Charge(Qg)(Max) @ Vgs - 153 nC @ 10 V
Vgs(Max) - ±20V
Input Capacitance(Ciss)(Max) @ Vds - 11400 pF @ 20 V
Power Dissipation (Max) 104W (Tc) 156W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Base Product Number CSD18511 -
Current - Continuous Drain (Id) @ 25°C 159A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V -
Rds On (Max) @ Id, Vgs 3.5mOhm @ 24A, 4.5V -
Vgs(th) (Max) @ Id 2.45V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 63 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 5850 pF @ 10 V -
Packaging Cut Tape (CT), Tape & Reel (TR) -
Compare RFQ