IRFB4019PBF vs IRFB4310ZPBF

Esta comparação detalhada entre IRFB4019PBF e IRFB4310ZPBF fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IRFB4019PBF

Rectificador Internacional

Lifecycle: Active
Stock: 6417 PCS
Package: TO-220-3
Series: Transistors - FETs, MOSFETs - Single

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Part B

IRFB4310ZPBF

Rectificador Internacional

Lifecycle: Active
Stock: 4141 PCS
Package: TO-220-3
Series: Transistors - FETs, MOSFETs - Single

+Lista de Materiais RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	IRFB4019PBF	IRFB4310ZPBF
Part Status	Active	Active
FET Type	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	150 V	100 V
Current - Continuous Drain(Id) @ 25°C	17A (Tc)	120A (Tc)
Drive Voltage(Max Rds On Min Rds On)	10V	10V
Rds On(Max) @ Id Vgs	95mOhm @ 10A, 10V	6mOhm @ 75A, 10V
Vgs(th)(Max) @ Id	4.9V @ 50µA	4V @ 150µA
Gate Charge(Qg)(Max) @ Vgs	20 nC @ 10 V	170 nC @ 10 V
Vgs(Max)	±20V	±20V
Input Capacitance(Ciss)(Max) @ Vds	800 pF @ 50 V	6860 pF @ 50 V
Power Dissipation (Max)	80W (Tc)	250W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole	Through Hole
Series	-	HEXFET®

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