IRLML6402TRPBF vs IRLML2803TRPBF

Esta comparação detalhada entre IRLML6402TRPBF e IRLML2803TRPBF fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification IRLML6402TRPBF IRLML2803TRPBF
Series HEXFET® HEXFET®
Part Status Last Time Buy Active
Base Product Number IRLML6402 -
FET Type P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 30 V
Current - Continuous Drain (Id) @ 25°C 3.7A (Ta) -
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V -
Rds On (Max) @ Id, Vgs 65mOhm @ 3.7A, 4.5V -
Vgs(th) (Max) @ Id 1.2V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 5 V -
Vgs (Max) ±12V -
Input Capacitance (Ciss) (Max) @ Vds 633 pF @ 10 V -
Power Dissipation (Max) 1.3W (Ta) 540mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Packaging Cut Tape (CT), Tape & Reel (TR) -
Current - Continuous Drain(Id) @ 25°C - 1.2A (Ta)
Drive Voltage(Max Rds On Min Rds On) - 4.5V, 10V
Rds On(Max) @ Id Vgs - 250mOhm @ 910mA, 10V
Vgs(th)(Max) @ Id - 1V @ 250µA
Gate Charge(Qg)(Max) @ Vgs - 5 nC @ 10 V
Vgs(Max) - ±20V
Input Capacitance(Ciss)(Max) @ Vds - 85 pF @ 25 V
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