STGW40H65DFB vs STGW40S120DF3

Esta comparação detalhada entre STGW40H65DFB e STGW40S120DF3 fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification STGW40H65DFB STGW40S120DF3
Supplier STMicroelectronics STMicroelectronics
Part Status Active Obsolete
IGBT Type Trench Field Stop Trench Field Stop
Voltage - Collector Emitter Breakdown(Max) 650 V 1200 V
Current - Collector(Ic)(Max) 80 A 80 A
Current - Collector Pulsed(Icm) 160 A 160 A
Vce(on)(Max) @ Vge Ic 2V @ 15V, 40A 2.15V @ 15V, 40A
Power - Max 283 W 468 W
Switching Energy 498µJ (on), 363µJ (off) 1.43mJ (on), 3.83mJ (off)
Input Type Standard Standard
Gate Charge 210 nC 129 nC
Td(on / off) @ 25°C 40ns/142ns 35ns/148ns
Test Condition 400V, 40A, 5Ohm, 15V 600V, 40A, 15Ohm, 15V
Reverse Recovery Time (trr) 62 ns 355 ns
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
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