STGW40H65DFB vs STGW45NC60VD

Esta comparação detalhada entre STGW40H65DFB e STGW45NC60VD fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification STGW40H65DFB STGW45NC60VD
Supplier STMicroelectronics STMicroelectronics
Part Status Active Obsolete
IGBT Type Trench Field Stop -
Voltage - Collector Emitter Breakdown(Max) 650 V 600 V
Current - Collector(Ic)(Max) 80 A 90 A
Current - Collector Pulsed(Icm) 160 A 220 A
Vce(on)(Max) @ Vge Ic 2V @ 15V, 40A 2.4V @ 15V, 30A
Power - Max 283 W 270 W
Switching Energy 498µJ (on), 363µJ (off) 333µJ (on), 537µJ (off)
Input Type Standard Standard
Gate Charge 210 nC 126 nC
Td(on / off) @ 25°C 40ns/142ns 33ns/178ns
Test Condition 400V, 40A, 5Ohm, 15V 390V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr) 62 ns 45 ns
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Series - PowerMESH™
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