STPSC1006D vs STPSC12H065CT

Esta comparação detalhada entre STPSC1006D e STPSC12H065CT fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification STPSC1006D STPSC12H065CT
Supplier STMicroelectronics STMicroelectronics
Part Status Active Active
Diode Configuration - 1 Pair Common Cathode
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 600 V 650 V
Current - Average Rectified(Io)(per Diode) - 6A
Voltage - Forward (Vf) (Max) @ If 1.75 V @ 10 A 1.75 V @ 6 A
Speed No Recovery Time > 500mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 300 µA @ 600 V 60 µA @ 650 V
Operating Temperature - Junction - -40°C ~ 175°C
Mounting Type Through Hole Through Hole
Current - Average Rectified(Io) 10A -
Reverse Recovery Time (trr) 0 ns -
Capacitance @ Vr F 650pF @ 0V, 1MHz -
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